Application of Zn diffusion in reducing the series resistance of the P-distributed Bragg reflector in GaAs/GaA1As vertical cavity surface emitting lasers

1996 ◽  
Author(s):  
Honghai Gao ◽  
ShiMing Lin ◽  
Junhua Gao ◽  
Xuejun Kang ◽  
Hongjie Wang ◽  
...  
Keyword(s):  
Series Resistance ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Zn Diffusion ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019 ◽  
Vol 9 (8) ◽  
pp. 1593 ◽  
Author(s):  
Cheng Zhang ◽  
Rami ElAfandy ◽  
Jung Han
Keyword(s):  
Bragg Reflector ◽  
Epitaxial Lateral Overgrowth ◽  
Current Status ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Trade Offs ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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