Spectroscopic study of red light emission in porous silicon

1995 ◽  
Vol 1 (4) ◽  
pp. 1140-1144 ◽  
Author(s):  
S.M. Prokes
Keyword(s):  
Porous Silicon ◽  
Spectroscopic Study ◽  
Light Emission ◽  
Red Light

Role of interfacial oxide-related defects in the red-light emission in porous silicon

1994 ◽  
Vol 49 (3) ◽  
pp. 2238-2241 ◽  
Author(s):  
S. M. Prokes ◽  
O. J. Glembocki
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Red Light

scholarly journals Incommensurately Modulated Crystal Structure and Photoluminescence Properties of Eu2O3- and P2O5-Doped Ca2SiO4 Phosphor

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 58
Author(s):  
Hiromi Nakano ◽  
Shota Ando ◽  
Konatsu Kamimoto ◽  
Yuya Hiramatsu ◽  
Yuichi Michiue ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Light Emission ◽  
Red Light ◽  
Basic Unit ◽  
Β Phase ◽  
Stacking Order ◽  
Cell Dimensions ◽  
Incommensurate Modulation ◽  
Unit Cell Dimensions ◽  
Identical Chemical Composition

We prepared four types of Eu2O3- and P2O5-doped Ca2SiO4 phosphors with different phase compositions but identical chemical composition, the chemical formula of which was (Ca1.950Eu3+0.013☐0.037)(Si0.940P0.060)O4 (☐ denotes vacancies in Ca sites). One of the phosphors was composed exclusively of the incommensurate (IC) phase with superspace group Pnma(0β0)00s and basic unit-cell dimensions of a = 0.68004(2) nm, b = 0.54481(2) nm, and c = 0.93956(3) nm (Z = 4). The crystal structure was made up of four types of β-Ca2SiO4-related layers with an interlayer. The incommensurate modulation with wavelength of 4.110 × b was induced by the long-range stacking order of these layers. When increasing the relative amount of the IC-phase with respect to the coexisting β-phase, the red light emission intensity, under excitation at 394 nm, steadily decreased to reach the minimum, at which the specimen was composed exclusively of the IC-phase. The coordination environments of Eu3+ ion in the crystal structures of β- and IC-phases might be closely related to the photoluminescence intensities of the phosphors.

Light Emission from Microcrystalline Si Confined in SiO2Matrix through Partial Oxidation of Anodized Porous Silicon

1992 ◽  
Vol 31 (Part 2, No.1A/B) ◽  
pp. L1-L3 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Akio Hiraki
Keyword(s):  
Porous Silicon ◽  
Partial Oxidation ◽  
Light Emission

Photoluminescence of Sm doped porous silicon—evidence for light emission through luminescence centers in SiO2layers

1994 ◽  
Vol 64 (24) ◽  
pp. 3282-3284 ◽  
Author(s):  
J. Lin ◽  
L. Z. Zhang ◽  
Y. M. Huang ◽  
B. R. Zhang ◽  
G. G. Qin
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Luminescence Centers

Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Koyama ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Thermal Effects ◽  
Light Emission ◽  
Laser Intensity ◽  
Excitation Intensity ◽  
Silicon Films ◽  
Free Standing ◽  
Induced Absorption ◽  
Cw Laser ◽  
Oxidized Porous Silicon

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

1994 ◽  
Vol 08 (02) ◽  
pp. 69-92 ◽  
Author(s):  
XUN WANG
Keyword(s):  
Porous Silicon ◽  
Blue Light ◽  
Light Emission ◽  
Energy State ◽  
Surface Recombination Velocity ◽  
Luminescence Spectroscopy ◽  
Carrier Injection ◽  
Blue Light Emission ◽  
Light Emitting ◽  
Si Nanostructures

In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

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