Role of interfacial oxide-related defects in the red-light emission in porous silicon

1994 ◽  
Vol 49 (3) ◽  
pp. 2238-2241 ◽  
Author(s):  
S. M. Prokes ◽  
O. J. Glembocki
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Red Light

The critical role of the coordination sphere in the high-efficiency blue-light emission from aminopyrazine metal-organic polymers

2021 ◽  
Vol 186 ◽  
pp. 109025
Author(s):  
João Humberto Dias Campos ◽  
Meiry Edivirges Alvarenga ◽  
Maykon Alves Lemes ◽  
José Antônio do Nascimento Neto ◽  
Freddy Fernandes Guimarães ◽  
...  
Keyword(s):  
Blue Light ◽  
Coordination Sphere ◽  
High Efficiency ◽  
Light Emission ◽  
Critical Role ◽  
Organic Polymers ◽  
Blue Light Emission ◽  
Metal Organic

scholarly journals Incommensurately Modulated Crystal Structure and Photoluminescence Properties of Eu2O3- and P2O5-Doped Ca2SiO4 Phosphor

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 58
Author(s):  
Hiromi Nakano ◽  
Shota Ando ◽  
Konatsu Kamimoto ◽  
Yuya Hiramatsu ◽  
Yuichi Michiue ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Light Emission ◽  
Red Light ◽  
Basic Unit ◽  
Β Phase ◽  
Stacking Order ◽  
Cell Dimensions ◽  
Incommensurate Modulation ◽  
Unit Cell Dimensions ◽  
Identical Chemical Composition

We prepared four types of Eu2O3- and P2O5-doped Ca2SiO4 phosphors with different phase compositions but identical chemical composition, the chemical formula of which was (Ca1.950Eu3+0.013☐0.037)(Si0.940P0.060)O4 (☐ denotes vacancies in Ca sites). One of the phosphors was composed exclusively of the incommensurate (IC) phase with superspace group Pnma(0β0)00s and basic unit-cell dimensions of a = 0.68004(2) nm, b = 0.54481(2) nm, and c = 0.93956(3) nm (Z = 4). The crystal structure was made up of four types of β-Ca2SiO4-related layers with an interlayer. The incommensurate modulation with wavelength of 4.110 × b was induced by the long-range stacking order of these layers. When increasing the relative amount of the IC-phase with respect to the coexisting β-phase, the red light emission intensity, under excitation at 394 nm, steadily decreased to reach the minimum, at which the specimen was composed exclusively of the IC-phase. The coordination environments of Eu3+ ion in the crystal structures of β- and IC-phases might be closely related to the photoluminescence intensities of the phosphors.

Light Emission from Microcrystalline Si Confined in SiO2Matrix through Partial Oxidation of Anodized Porous Silicon

1992 ◽  
Vol 31 (Part 2, No.1A/B) ◽  
pp. L1-L3 ◽  
Author(s):  
Toshimichi Ito ◽  
Toshimichi Ohta ◽  
Akio Hiraki
Keyword(s):  
Porous Silicon ◽  
Partial Oxidation ◽  
Light Emission

Photoluminescence of Sm doped porous silicon—evidence for light emission through luminescence centers in SiO2layers

1994 ◽  
Vol 64 (24) ◽  
pp. 3282-3284 ◽  
Author(s):  
J. Lin ◽  
L. Z. Zhang ◽  
Y. M. Huang ◽  
B. R. Zhang ◽  
G. G. Qin
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Luminescence Centers
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