High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers

1995 ◽  
Vol 1 (2) ◽  
pp. 189-194 ◽  
Author(s):  
M. Sagawa ◽  
T. Toyonaka ◽  
K. Hiramoto ◽  
K. Shinoda ◽  
K. Uomi
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Reliable Operation ◽  
Single Quantum Well

High‐power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrors

1987 ◽  
Vol 50 (23) ◽  
pp. 1640-1641 ◽  
Author(s):  
P. Tihanyi ◽  
D. K. Wagner ◽  
A. J. Roza ◽  
H. J. Vollmer ◽  
C. M. Harding ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Ion Beam ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well

High-Power 0.8 µm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers

1999 ◽  
Vol 38 (Part 2, No. 4A) ◽  
pp. L387-L389 ◽  
Author(s):  
Toshiaki Fukunaga ◽  
Mitsugu Wada ◽  
Toshiro Hayakawa
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well

Lifetime extension of uncoated AlGaAs single quantum well lasers by high power burn-in in inert atmospheres

1994 ◽  
Vol 30 (2) ◽  
pp. 143-145 ◽  
Author(s):  
W.C. Tang ◽  
D.J. Webb ◽  
H.J. Rosen ◽  
E.H. Altendorf ◽  
P. Vettiger
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lifetime Extension

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation
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