Reliable operation of strain‐compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers

Toshiaki Fukunaga; Mitsugu Wada; Toshiro Hayakawa

doi:10.1063/1.117939

Reliable operation of strain‐compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers

Applied Physics Letters ◽

10.1063/1.117939 ◽

1996 ◽

Vol 69 (2) ◽

pp. 248-250 ◽

Cited By ~ 32

Author(s):

Toshiaki Fukunaga ◽

Mitsugu Wada ◽

Toshiro Hayakawa

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Reliable Operation ◽

Single Quantum Well

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High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/2944.401196 ◽

1995 ◽

Vol 1 (2) ◽

pp. 189-194 ◽

Cited By ~ 37

Author(s):

M. Sagawa ◽

T. Toyonaka ◽

K. Hiramoto ◽

K. Shinoda ◽

K. Uomi

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Single Quantum ◽

Reliable Operation ◽

Single Quantum Well

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Reliable Operation Of High Power Density Ridge Waveguide Psoudomorphic Single Quantum Well Lasers At 980nm

LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting ◽

10.1109/leos.1990.690643 ◽

2005 ◽

Author(s):

S. Forouhar ◽

A. Larsson ◽

J. Cody ◽

R.J. Lang

Keyword(s):

Quantum Well ◽

Power Density ◽

High Power ◽

Ridge Waveguide ◽

Quantum Well Lasers ◽

High Power Density ◽

Single Quantum ◽

Reliable Operation ◽

Single Quantum Well

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters ◽

10.1109/68.823492 ◽

2000 ◽

Vol 12 (2) ◽

pp. 128-130 ◽

Cited By ~ 7

Author(s):

X. Yang ◽

J.B. Heroux ◽

M.J. Jurkovic ◽

W.I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Narrow stripe graded barrier single quantum well lasers-threshold current considerations

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1987.1073457 ◽

1987 ◽

Vol 23 (6) ◽

pp. 988-992 ◽

Cited By ~ 11

Author(s):

N. Patel ◽

T. Mattos ◽

F. Prince ◽

A. Nunes

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Narrow Stripe

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Carrier Leakage Effects in GaAsP/AlGaAs Single-Quantum-Well Lasers Determined by Hydrostatic Pressure Measurements

physica status solidi (b) ◽

10.1002/(sici)1521-3951(199901)211:1<533::aid-pssb533>3.0.co;2-# ◽

1999 ◽

Vol 211 (1) ◽

pp. 533-538 ◽

Cited By ~ 7

Author(s):

H. Page ◽

A.T. Meney ◽

A.R. Adams ◽

C.J. van der Poel

Keyword(s):

Hydrostatic Pressure ◽

Quantum Well ◽

Quantum Well Lasers ◽

Pressure Measurements ◽

Single Quantum ◽

Single Quantum Well

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IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1983.21382 ◽

1983 ◽

Vol 30 (11) ◽

pp. 1592-1593

Author(s):

R.D. Dupuis ◽

R.L. Hartman ◽

F.R. Nash

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Degradation Rates

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High-speed operation of single-quantum-well lasers with large gain compression

IEEE Photonics Technology Letters ◽

10.1109/68.122334 ◽

1992 ◽

Vol 4 (2) ◽

pp. 118-120 ◽

Cited By ~ 8

Author(s):

K.Y. Lau ◽

N. Bar-Chaim

Keyword(s):

Quantum Well ◽

High Speed ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Gain Compression ◽

Large Gain

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Emission spectra of single quantum well lasers with inhomogeneous current injection

Journal of Applied Physics ◽

10.1063/1.341911 ◽

1988 ◽

Vol 64 (3) ◽

pp. 1022-1026 ◽

Cited By ~ 12

Author(s):

Yasunori Tokuda ◽

Yuji Abe ◽

Teruhito Matsui ◽

Kyozo Kanamoto ◽

Noriaki Tsukada ◽

...

Keyword(s):

Quantum Well ◽

Emission Spectra ◽

Current Injection ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Nonparabolicity effects on carrier lifetimes in bulk Hg1-xCdxTe alloys and Mid-Infrared 2D Hg1-xCdxTe/CdTe Single Quantum Well Lasers

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106780 ◽

2021 ◽

Vol 150 ◽

pp. 106780

Author(s):

F.Z. Mami ◽

A. Kadri ◽

N. Mokdad ◽

K. Zitouni

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Mid Infrared ◽

Carrier Lifetimes

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Reliable operation of strain‐compensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers

High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers

Reliable Operation Of High Power Density Ridge Waveguide Psoudomorphic Single Quantum Well Lasers At 980nm

Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

Narrow stripe graded barrier single quantum well lasers-threshold current considerations

Carrier Leakage Effects in GaAsP/AlGaAs Single-Quantum-Well Lasers Determined by Hydrostatic Pressure Measurements

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (&lt;1%/kh) at 70°C

High-speed operation of single-quantum-well lasers with large gain compression

Emission spectra of single quantum well lasers with inhomogeneous current injection

Nonparabolicity effects on carrier lifetimes in bulk Hg1-xCdxTe alloys and Mid-Infrared 2D Hg1-xCdxTe/CdTe Single Quantum Well Lasers

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C