Optimization of the driving circuit for material processing with a pulsed-glow discharge

2000 ◽  
Vol 28 (3) ◽  
pp. 1035-1042 ◽  
Author(s):  
O.E. Martinez ◽  
N. Mingolo ◽  
Y. Cesa
Keyword(s):  
Material Processing ◽  
Glow Discharge ◽  
Pulsed Glow Discharge ◽  
Driving Circuit

Lumas-30 time-of-flight mass spectrometer with pulsed glow discharge for direct determination of nitrogen in steel

2011 ◽  
Vol 66 (14) ◽  
pp. 1411-1416 ◽  
Author(s):  
A. A. Ganeev ◽  
A. R. Gubal’ ◽  
V. I. Mosichev ◽  
N. V. Pershin ◽  
S. N. Petrov ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Mass Spectrometer ◽  
Time Of Flight ◽  
Direct Determination ◽  
Pulsed Glow Discharge ◽  
Flight Mass Spectrometer

Matrix-matched standards for the quantification of elemental lithium ion battery degradation products deposited on carbonaceous negative electrodes using pulsed-glow discharge-sector field-mass spectrometry

2017 ◽  
Vol 32 (10) ◽  
pp. 1862-1867 ◽  
Author(s):  
Marco Evertz ◽  
Timo Schwieters ◽  
Markus Börner ◽  
Martin Winter ◽  
Sascha Nowak
Keyword(s):  
Mass Spectrometry ◽  
Glow Discharge ◽  
Lithium Ion Battery ◽  
Degradation Products ◽  
Lithium Ion ◽  
Field Mass ◽  
Pulsed Glow Discharge ◽  
Negative Electrodes ◽  
Battery Degradation ◽  
Sector Field Mass Spectrometry

A glow discharge-sector field-mass spectrometry (GD-SF-MS) method using matrix-matched self-prepared carbonaceous standards for elemental battery degradation products of (NCM111) electrodes was developed.

Methods of Improving Glow-Discharge-Deposited a-Si1−xGex:H

1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
E. A. Ramsay ◽  
R. S. Crandall ◽  
S. J. Salomon ◽  
...  
Keyword(s):  
Material Processing ◽  
Glow Discharge ◽  
Substrate Temperature ◽  
Gas Mixtures ◽  
Gas Composition ◽  
Processing Methods ◽  
Helium 4 ◽  
Process Gas

ABSTRACTWe have studied methods of improving glow-discharge-deposited a-Si1−x Gex :H alloys deposited using silane and germane gas mixtures. Material processing methods studied include (1) varying the substrate temperature from 170° to 280°C, (2) varying the process gas composition and pressure, (3) dilution of the feed gas by hydrogen, argon, or helium, (4) enhancing etching during deposition by adding small amounts of XeF2 vapor into the process gas, and (5) postdeposition annealing and/or hydrogenation.

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