Ion density and temperature distributions in an inductively coupled high-plasma density reactor

1996 ◽  
Vol 24 (1) ◽  
pp. 129-130 ◽  
Author(s):  
D.P. Lymberopoulos ◽  
R.S. Wise ◽  
D.J. Economou ◽  
T.J. Bartel
Keyword(s):  
Plasma Density ◽  
High Plasma ◽  
Ion Density ◽  
Inductively Coupled ◽  
Temperature Distributions ◽  
High Plasma Density

Extraction of single-ion beams from helicon ion source in high plasma density operation mode: Experiment and simulation

2006 ◽  
Vol 77 (3) ◽  
pp. 03B901 ◽  
Author(s):  
S. Mordyk ◽  
V. Miroshnichenko ◽  
A. Nahornyy ◽  
D. Nahornyy ◽  
D. Shulha ◽  
...  
Keyword(s):  
Plasma Density ◽  
Operation Mode ◽  
High Plasma ◽  
Ion Beams ◽  
Ion Source ◽  
High Plasma Density ◽  
Experiment And Simulation

Effecting the condition of quasistationary thermonuclear burning in tokamaks with a high plasma density

1987 ◽  
Vol 63 (2) ◽  
pp. 661-664
Author(s):  
N. N. Vasil'ev ◽  
V. �. Lukash ◽  
M. N. Mariinskii ◽  
A. V. Nedospasov
Keyword(s):  
Plasma Density ◽  
High Plasma ◽  
Thermonuclear Burning ◽  
High Plasma Density

Feature Evolution During Sub 100NM Gap-Fill and Etch

2005 ◽  
Author(s):  
Hemant Mungekar ◽  
Young S. Lee ◽  
Shankar Venkataraman
Keyword(s):  
Inductively Coupled Plasma ◽  
Scale Up ◽  
High Plasma ◽  
Inductively Coupled ◽  
Positive Ions ◽  
Aspect Ratios ◽  
High Plasma Density ◽  
Semiconductor Fabrication ◽  
Wafer Size ◽  
Feature Evolution

Inductively coupled plasma (ICP) reactors are being used at low gas pressure (<100mTorr) and high plasma density ([e] > 1013/cm2) processes in semiconductor fabrication. In these reactors plasma is generated by inductively coupled electric field while positive ions are accelerated anisotropically by applying a negative bias RF to the substrate. Semiconductor manufacturers face many challenges as wafer size increases while device geometries decrease. Two key challenges for both process design and electronics processing equipment design are (a) scale up of process from 200mm to 300mm diameter substrate, and (b) deposition and etching features with high aspect ratios. A unified phenomenological model to explain profile evolution trend as a function of aspect ratio for deposition (gap fill) and trench etch using ICP reactors is presented. Trends for feature evolution as a function of pressure for gap fill and trench etch are reviewed and explained. The article emphasizes importance of low pressure for sub-100nm gap-fill and trench-etch applications in ICP processing reactors.

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