Impact of substrate thickness on single-event effects in integrated circuits

2001 ◽  
Vol 48 (6) ◽  
pp. 1865-1871 ◽  
Author(s):  
P.E. Dodd ◽  
M.R. Shaneyfelt ◽  
E. Fuller ◽  
J.C. Pickel ◽  
F.W. Sexton ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Substrate Thickness ◽  
Single Event ◽  
Single Event Effects

Laser cross section measurement for the evaluation of single-event effects in integrated circuits

2000 ◽  
Vol 40 (8-10) ◽  
pp. 1371-1375 ◽  
Author(s):  
V. Pouget ◽  
P. Fouillat ◽  
D. Lewis ◽  
H. Lapuyade ◽  
F. Darracq ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cross Section ◽  
Single Event ◽  
Cross Section Measurement ◽  
Single Event Effects ◽  
Section Measurement

scholarly journals Single event effects qualificatoin of integrated circuits

2020 ◽  
Vol 27 (1) ◽  
pp. 68-82
Author(s):  
Armen V. Sogoyan ◽  
Anatoly A. Smolin ◽  
Alexander I. Chumakov
Keyword(s):  
Integrated Circuits ◽  
Single Event ◽  
Single Event Effects

A prediction technique for single-event effects on complex integrated circuits

2015 ◽  
Vol 36 (11) ◽  
pp. 115003
Author(s):  
Yuanfu Zhao ◽  
Chunqing Yu ◽  
Long Fan ◽  
Suge Yue ◽  
Maoxin Chen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Single Event ◽  
Single Event Effects ◽  
Prediction Technique

scholarly journals CMOS IC radiation hardening by design

2014 ◽  
Vol 27 (2) ◽  
pp. 251-258 ◽  
Author(s):  
Alessandra Camplani ◽  
Seyedruhollah Shojaii ◽  
Hitesh Shrimali ◽  
Alberto Stabile ◽  
Valentino Liberali
Keyword(s):  
Integrated Circuits ◽  
Total Dose ◽  
Radiation Hardening ◽  
Single Event ◽  
Silicon Area ◽  
Single Event Effects ◽  
Main Drawback ◽  
Conventional Design ◽  
Cmos Ic ◽  
Radiation Hardening By Design

Design techniques for radiation hardening of integrated circuits in commercial CMOS technologies are presented. Circuits designed with the proposed approaches are more tolerant to both total dose and to single event effects. The main drawback of the techniques for radiation hardening by design is the increase of silicon area, compared with a conventional design.

SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS

2004 ◽  
Vol 14 (02) ◽  
pp. 311-325 ◽  
Author(s):  
DALE McMORROW ◽  
JOSEPH S. MELINGER ◽  
ALVIN R. KNUDSON
Keyword(s):  
Energy Transfer ◽  
Integrated Circuits ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Single Event Upset ◽  
Single Event ◽  
Single Event Effects ◽  
Semiconductor Electronics ◽  
Effect Transistor

Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are discussed.

scholarly journals Investigate the Equivalence of Neutrons and Protons in Single Event Effects Testing: A Geant4 Study

2020 ◽  
Vol 10 (9) ◽  
pp. 3234
Author(s):  
Yueh Chiang ◽  
Cher Ming Tan ◽  
Tsi-Chian Chao ◽  
Chung-Chi Lee ◽  
Chuan-Jong Tung
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Integrated Circuits ◽  
Neutron Radiation ◽  
Washington Dc ◽  
Single Event ◽  
Reliable Operation ◽  
Single Event Effects ◽  
Future Work ◽  
Mev Protons

Neutron radiation on advanced integrated circuits (ICs) is becoming important for their reliable operation. However, a neutron test on ICs is expensive and time-consuming. In this work, we employ Monte Carlo simulation to examine if a proton test can replace or even accelerate the neutron test, and we found that 200 MeV protons are the closest to resembling neutron radiation with five main differences. This 200 MeV concur with the suggestion from National Aeronautics and Space Administration (NASA, Washington, DC, USA). However, the impacts of the five differences on single event effects (SEEs) require future work for examination.

Sign in / Sign up

Export Citation Format

Share Document