2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements

2000 ◽  
Vol 47 (6) ◽  
pp. 2322-2328 ◽  
Author(s):  
S.M. Khanna ◽  
J. Webb ◽  
H. Tang ◽  
A.J. Houdayer ◽  
C. Carlone
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Radiation Damage ◽  
Photoluminescence Spectroscopy ◽  
Proton Radiation ◽  
Low Temperature Photoluminescence

Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics

2011 ◽  
Vol 679-680 ◽  
pp. 173-176
Author(s):  
John W. Steeds
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Photoluminescence Spectroscopy ◽  
Epitaxial Layers ◽  
Annealing Behaviour ◽  
Wide Range ◽  
Nitrogen Concentrations ◽  
P Type ◽  
Different Sources ◽  
Low Temperature Photoluminescence

In the course of studying by low temperature photoluminescence spectroscopy a wide range of electron-irradiated samples of p(Al)-type epitaxial layers of 4H SiC, from a variety of different sources of supply, the results were found to fit into two very different categories. The origin of these differences has been explored using a wide range of experimental techniques and found to result from the degree of compensation of the aluminium by nitrogen in the layers. Nitrogen concentrations deduced by SIMS experiments on these materials were found to be unreliable. The two different categories of material, called V and AB here, showed marked differences in their subsequent annealing behaviour and the implications of this distinction are discussed.

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 437-440 ◽  
Author(s):  
John W. Steeds
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Carbon Vacancy ◽  
Low Temperature Photoluminescence

A common set of optical centres found in photoluminescence spectra of electron irradiated 4H SiC is interpreted as originating in neutral carbon-vacancy carbon anti-site pairs.

scholarly journals Low-Temperature Photoluminescence Spectroscopy of Solvent-Free PCBM Single-Crystals

2015 ◽  
Vol 119 (21) ◽  
pp. 11846-11851 ◽  
Author(s):  
Giulia Tregnago ◽  
Michael Wykes ◽  
Giuseppe M. Paternò ◽  
David Beljonne ◽  
Franco Cacialli
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Photoluminescence Spectroscopy ◽  
Solvent Free ◽  
Low Temperature Photoluminescence

Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes

2004 ◽  
Vol 51 (6) ◽  
pp. 3585-3594 ◽  
Author(s):  
S.M. Khanna ◽  
D. Estan ◽  
A. Houdayer ◽  
H.C. Liu ◽  
R. Dudek
Keyword(s):  
Low Temperature ◽  
Radiation Damage ◽  
Light Emitting Diodes ◽  
Proton Radiation ◽  
Light Emitting

scholarly journals Using Low Temperature Photoluminescence Spectroscopy to Investigate CH3NH3PbI3 Hybrid Perovskite Degradation

Molecules ◽  
2016 ◽  
Vol 21 (7) ◽  
pp. 885 ◽  
Author(s):  
Khaoula Jemli ◽  
Hiba Diab ◽  
Ferdinand Lédée ◽  
Gaelle Trippé-Allard ◽  
Damien Garrot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Spectroscopy ◽  
Hybrid Perovskite ◽  
Low Temperature Photoluminescence

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 171-174 ◽  
Author(s):  
Jean Lorenzzi ◽  
Georgios Zoulis ◽  
Olivier Kim-Hak ◽  
Nikoletta Jegenyes ◽  
Davy Carole ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Purity ◽  
Doping Level ◽  
Systematic Investigation ◽  
Photoluminescence Spectroscopy ◽  
Single Domain ◽  
New Approach ◽  
Residual N ◽  
Low Temperature Photoluminescence

We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed by Raman and Low Temperature Photoluminescence spectroscopy. The resultant 3C morphology remains typical of single-domain layers and the n-type doping level could be estimated around 6x1016 cm-3.

Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires

1999 ◽  
Vol 60 (19) ◽  
pp. 13335-13338 ◽  
Author(s):  
V. Emiliani ◽  
Ch. Lienau ◽  
M. Hauert ◽  
G. Colí ◽  
M. DeGiorgi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wires ◽  
Near Field ◽  
Photoluminescence Spectroscopy ◽  
Low Temperature Photoluminescence
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