The effect of power supply voltage scaling on the total dose radiation response of fully-depleted SOI MOS transistors

1995 ◽  
Vol 42 (6) ◽  
pp. 2122-2126 ◽  
Author(s):  
S.T. Liu ◽  
W.C. Jenkins
2010 ◽  
Vol E93-C (3) ◽  
pp. 332-339 ◽  
Author(s):  
Tadashi YASUFUKU ◽  
Taro NIIYAMA ◽  
Zhe PIAO ◽  
Koichi ISHIDA ◽  
Masami MURAKATA ◽  
...  

2006 ◽  
Vol 913 ◽  
Author(s):  
Georges Guegan ◽  
Romain Gwoziecki ◽  
Olivier Gonnard ◽  
Gilles Gouget ◽  
Christine Raynaud ◽  
...  

AbstractThe temperature rise in SOI has been measured on two successive generations. This work shows that self-heating effects become less and less severe with both MOSFET and power supply voltage scaling.


2016 ◽  
Vol 84 (3) ◽  
pp. 413-424 ◽  
Author(s):  
Yanxiang Huang ◽  
Meng Li ◽  
Chunshu Li ◽  
Peter Debacker ◽  
Liesbet Van der Perre

2018 ◽  
Vol 27 (08) ◽  
pp. 1850128 ◽  
Author(s):  
R. Nagulapalli ◽  
K. Hayatleh ◽  
Steve Barker ◽  
Sumathi Raparthy ◽  
Nabil Yassine ◽  
...  

This paper exploits the CMOS beta multiplier circuit to synthesize a temperature-independent voltage reference suitable for low voltage and ultra-low power biomedical applications. The technique presented here uses only MOS transistors to generate Proportional To Absolute Temperature (PTAT) and Complimentary To Absolute Temperature (CTAT) currents. A self-biasing technique has been used to minimize the temperature and power supply dependency. A prototype in 65[Formula: see text]nm CMOS has been developed and occupies 0.0039[Formula: see text]mm2, and at room temperature, it generates a 204[Formula: see text]mV reference voltage with 1.3[Formula: see text]mV drift over a wide temperature range (from [Formula: see text]40[Formula: see text]C to 125[Formula: see text]C). This has been designed to operate with a power supply voltage down to 0.6[Formula: see text]V and consumes 1.8[Formula: see text]uA current from the supply. The simulated temperature coefficient is 40[Formula: see text]ppm/[Formula: see text]C.


2011 ◽  
Vol E94-C (6) ◽  
pp. 1072-1075
Author(s):  
Tadashi YASUFUKU ◽  
Yasumi NAKAMURA ◽  
Zhe PIAO ◽  
Makoto TAKAMIYA ◽  
Takayasu SAKURAI

2016 ◽  
Vol E99.C (10) ◽  
pp. 1219-1225
Author(s):  
Masahiro ISHIDA ◽  
Toru NAKURA ◽  
Takashi KUSAKA ◽  
Satoshi KOMATSU ◽  
Kunihiro ASADA

1993 ◽  
Vol 29 (15) ◽  
pp. 1324 ◽  
Author(s):  
L.E. Larson ◽  
M.M. Matloubian ◽  
J.J. Brown ◽  
A.S. Brown ◽  
M. Thompson ◽  
...  

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