Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer

1995 ◽  
Vol 42 (6) ◽  
pp. 1837-1843 ◽  
Author(s):  
D. McMorrow ◽  
T.R. Weatherford ◽  
W.R. Curtice ◽  
A.R. Knudson ◽  
S. Buchner ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Gaas Buffer Layer ◽  
Low Temperature Grown Gaas

Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

1996 ◽  
Vol 43 (3) ◽  
pp. 918-923 ◽  
Author(s):  
D. McMorrow ◽  
T.R. Weatherford ◽  
A.R. Knudson ◽  
S. Buchner ◽  
J.S. Melinger ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Charge Collection ◽  
Gaas Buffer Layer ◽  
Heterostructure Fets ◽  
Low Temperature Grown Gaas

Charge-collection characteristics of GaAs MESFETs fabricated with a low-temperature grown GaAs buffer layer: computer simulation

1996 ◽  
Vol 43 (6) ◽  
pp. 2904-2912 ◽  
Author(s):  
D. McMorrow ◽  
W.R. Curtice ◽  
S. Buchner ◽  
A.R. Knudson ◽  
J.S. Melinger ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Low Temperature ◽  
Buffer Layer ◽  
Charge Collection ◽  
Gaas Buffer Layer ◽  
Low Temperature Grown Gaas

Material and Device Characteristics of MBE Microwave Power FETs with Buffer Layers Grown at Low Temperature (300°C)

1991 ◽  
Vol 241 ◽  
Author(s):  
J. M. Ballingall ◽  
Pin Ho ◽  
R. P. Smith ◽  
S. Wang ◽  
G. Tessmer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hall Effect ◽  
Buffer Layer ◽  
Active Layer ◽  
Cross Sections ◽  
Microwave Power ◽  
Buffer Layers ◽  
Heat Treated ◽  
Gaas Buffer Layer ◽  
5 Ghz

ABSTRACTMBE GaAs grown at low temperature (300°C) is evaluated for its suitability as a buffer layer for microwave power FETs. Hall effect and capacitance-voltage (C-V) measurements show that low temperature (LT) buffers may have strong deleterious effects on the electronic quality of FET active layers unless they are heat-treated in-situ at 600'C and topped with a thin (∼0. lμm) 600°C GaAs buffer prior to growth of the FET active layer. The voltage isolation properties of the LT buffers are found to be thermally stable to rapid thermal anneals up to 870°C for 10 seconds.Transmission electron microscopy (TEM) cross-sections were examined on FET layers with LT buffer layers which ranged in thickness from 0.1μm to 1.0μm. The TEM reveals a high density (∼1017 cm−3) of small (<100Å) arsenic precipitates in all of the buffer layers studied. In cases where the LT buffer is not heat treated and topped with a thin 600°C GaAs buffer layer, dislocations and arsenic precipitates extend from the buffer layer into the FET active layer. Their presence in the active layer correlates with the degradation in electronic properties observed with Hall effect and CV. Microwave power FETs were measured at DC and 5 GHz. DC and RF results for devices with LT buffer layers are comparable to devices with conventional buffer layers.

Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1323-1330 ◽  
Author(s):  
R. S. Berg ◽  
Nergis Mavalvala ◽  
Tracie Steinberg ◽  
F. W. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gaas Buffer Layer ◽  
Raman Study

Photoluminescence of InP/GaAs/Si Heterostructures

1988 ◽  
Vol 144 ◽  
Author(s):  
V.P. Mazzi ◽  
N.M. Haegel ◽  
S.M. Vernon ◽  
V.E. Haven
Keyword(s):  
Residual Stress ◽  
Thermal Expansion ◽  
Low Temperature ◽  
Band Gap ◽  
Buffer Layer ◽  
Thermal Expansion Mismatch ◽  
Si Substrates ◽  
Gaas Buffer Layer ◽  
Buffer Layer Thickness ◽  
Low Temperature Photoluminescence

ABSTRACTLow temperature photoluminescence results from MOCVD epitaxial InP grown on GaAs/Si substrates are presented as a function of thickness of the GaAs buffer layer. As a consequence of thermal expansion mismatch of the heterostructure, the InP layer contains residual stress which causes the band gap to shift and splits the valence band degeneracy of the mj = ± 3/2 and the mj = ± 1/2 bands. Both the shifting and splitting phenomena are clearly seen in tite PL results and are shown to depend on the GaAs buffer layer thickness.

Effect of N Incorporation on Growth Behavior of InGaAsN/GaAs/Ge Multi-Layered Structure by MOVPE

2013 ◽  
Vol 802 ◽  
pp. 129-133 ◽  
Author(s):  
Pornsiri Wanarattikan ◽  
Sakuntam Sanorpim ◽  
Somyod Denchitcharoen ◽  
Kenjiro Uesugi ◽  
Takehiko Kikuchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Domain Size ◽  
Matching Condition ◽  
Growth Behavior ◽  
Lattice Matching ◽  
Transmission Electron ◽  
Gaas Buffer Layer ◽  
N Incorporation ◽  
Low Temperature Gaas

We have investigated an effect of N incorporation on InGaAsN on Ge (001), which is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell, and on its growth behavior. Results obtained from high resolution X-ray diffraction and Raman scattering demonstrated that high quality In0.11Ga0.89As1-yNy films with N (y) contents up to 5% were successfully grown on n-type doped Ge (001) substrate by metalorganic vapor phase epitaxy using low-temperature (500°C) GaAs buffer layer. As expectation, the In0.11Ga0.89As0.96N0.04 film is examined to be under lattice-matching condition. Anti-phase domains were observed for the film without N incorporation, which exhibits submicron-size domains oriented along the [110] direction on the grown surface. With increasing N content, the domains become less orientation, and present in a larger domain size. Based on results of transmission electron microscopy, a high density of anti-phase domains was clearly observed at the interface of low-temperature GaAs buffer layer and Ge substrate. On the other hand, it is found to drastically reduce within the N-contained InGaAsN region. Furthermore, the lattice-matched In0.11Ga0.89As0.96N0.04 film is well developed to reduce the density of anti-phase domains.

Sign in / Sign up

Export Citation Format

Share Document