Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors

1989 ◽  
Vol 36 (6) ◽  
pp. 2155-2160 ◽  
Author(s):  
Y. Song ◽  
M.E. Kim ◽  
A.K. Oki ◽  
M.E. Hafizi ◽  
W.D. Murlin ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

Neutron irradiation induced degradation of the collector–emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors

2000 ◽  
Vol 88 (6) ◽  
pp. 3765-3767 ◽  
Author(s):  
Alexei Shatalov ◽  
S. Subramanian ◽  
A. Dentai ◽  
S. Chadrasekhar ◽  
S. M. Goodnick
Keyword(s):  
Neutron Irradiation ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Offset Voltage

Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors

1988 ◽  
Vol 35 (6) ◽  
pp. 1657-1661 ◽  
Author(s):  
G.A. Schrantz ◽  
N.W. van Vonno ◽  
W.A. Krull ◽  
M.A. Rao ◽  
S.I. Long ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Irradiation Effects

Degradation and Recovery of Si1−xGex Devices by Irradiation

1995 ◽  
Vol 379 ◽  
Author(s):  
H. Ohyama ◽  
J. Vanhellemont ◽  
Y. Takami ◽  
K. Hayama ◽  
T. Kudo ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Heterojunction Bipolar Transistors ◽  
Radiation Source ◽  
Bipolar Transistors ◽  
Isochronal Annealing ◽  
Device Performance ◽  
Absorbed Energy ◽  
Strained Si ◽  
Germanium Content ◽  
Recovery Behavior

ABSTRACTResults are presented of a study on the degradation and recovery behavior of strained Si 1−xGex diodes and heterojunction bipolar transistors (HBTs) by electron and neutron irradiation. The degradation of device performance and the generation of lattice defects are reported as a function of germanium content and radiation source. Isochronal annealing is performed to study the recovery behavior of the irradiated devices. The radiation source dependence of the degradation is discussed taking into account the absorbed energy dunng irradiation.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base

1983 ◽  
Vol 19 (10) ◽  
pp. 367 ◽  
Author(s):  
D.L. Miller ◽  
P.M. Asbeck ◽  
R.J. Anderson ◽  
F.H. Eisen
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors
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