Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays

1994 ◽  
Vol 41 (6) ◽  
pp. 2063-2070 ◽  
Author(s):  
G.R. Srinivasan ◽  
H.K. Tang ◽  
P.C. Murley
MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 111-116 ◽  
Author(s):  
Henry H.K. Tang ◽  
Kenneth P. Rodbell

AbstractWe review the current understanding of single-event upsets (SEUs) in microelectronic devices. In recent years, SEUs have been recognized as one of the key reliability concerns for both current and future technologies. We identify the major sources of SEUs that impact many commercial products: (1) alpha particles in packaging materials, (2) background radiation due to cosmic rays, and (3) thermal neutrons in certain device materials. The origins of SEUs are examined from the standpoint of the fundamental atomic and nuclear interactions between the intruding particles (alpha particles, cosmic rays, and thermal neutrons) and semiconductor materials. We analyze field funneling, which is a key mechanism of charge collection in a device struck by an ionizing particle. Next, we formulate how SEU cross sections and SEU rates are calculated and discuss how these basic quantities are related to experiments. Finally, we summarize the major SEU issues regarding modeling, bulk complementary metal oxide semiconductor technologies, and research on future, exploratory technologies.


MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 131-135 ◽  
Author(s):  
Paul Goldhagen

AbstractNeutrons from collisions of cosmic rays with the nuclei of atoms in the atmosphere are an irremovable external radiation that causes single-event upsets in microelectronic devices. Predicting soft error rates requires knowledge of the flux and energy distribution of the cosmic-ray-induced neutrons. This article reviews cosmic-ray neutrons in the atmosphere and on the ground, the factors that determine their intensity, and recent calculations and state-of-the-art measurements of neutron spectra covering 12 decades of energy, from the thermal energy range up to 10 GeV.


2005 ◽  
Vol 52 (6) ◽  
pp. 2319-2325 ◽  
Author(s):  
J. Baggio ◽  
V. Ferlet-Cavrois ◽  
D. Lambert ◽  
P. Paillet ◽  
F. Wrobel ◽  
...  

1994 ◽  
Vol 41 (6) ◽  
pp. 2244-2251 ◽  
Author(s):  
D.J. Fouts ◽  
T. Weatherford ◽  
D. McMorrow ◽  
J.S. Melinger ◽  
A.B. Campbell

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