Comparison of the generation of interface states in MOS structures due to /sup 60/Co and VUV irradiation accompanied with photoinjection of electrons

1994 ◽  
Vol 41 (3) ◽  
pp. 460-465 ◽  
Author(s):  
S. Scharf ◽  
M. Schmidt ◽  
F. Wulf ◽  
D. Braunig
Keyword(s):  
Interface States ◽  
Mos Structures

Conversion Tunneling in Non-Ideal Schottky Barriers: Virtual Resonance Manifestation and Interface States Influence

1996 ◽  
Vol 448 ◽  
Author(s):  
D.A. Romanov ◽  
A.V. Kalameitsev ◽  
A.P. Kovchavtsev ◽  
I.M. Subbotin
Keyword(s):  
Inversion Layer ◽  
Differential Resistance ◽  
Interface States ◽  
Tunnel Current ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Electron States ◽  
Current Voltage ◽  
Transfer Matrix Approach ◽  
Mos Structures

AbstractWe have investigated experimentally and theoretically the elastic conversion tunneling of charge carriers in MOS structures Au on p+-InAs with superthin (10-20 Å) oxide film, the structures used in infrared photodetectors. In these structures the Schottky barrier provides near-surface inversion layer. The tunnel current-voltage (I-V) curves obtained at helium temperatures demonstrate the negative differential resistance region (NDR). We develop semiclassical two-band transfer matrix approach to the conversion tunneling analysis in a multilayer structure and calculate on its base the I-V curves dependence on the structure parameters. The NDR occurs to be caused by the motion of the remote quantum level in the inversion layer. The calculated I-V characteristics agree with the experimental ones quite well. The very existence of NDR and the shape of I-V curves depends strongly on the nature of localized electron states at the semiconductor interface. The characteristics of these electron states are used in the calculations as fitting parameters. Therefore, we suggest a new method for the interface states diagnosis.

Characterization of interface states at Au/SnO2/n-Si (MOS) structures

Vacuum ◽  
2008 ◽  
Vol 82 (11) ◽  
pp. 1203-1207 ◽  
Author(s):  
A. Tataroğlu ◽  
Ş. Altındal
Keyword(s):  
Interface States ◽  
Mos Structures

Interface states and impurities in MOS structures with very thin tunneling barriers

1987 ◽  
Vol 30 (1-4) ◽  
pp. 304-310 ◽  
Author(s):  
P. Balk ◽  
L.Do Thanh ◽  
S. Ewert ◽  
M. Kuball ◽  
S. Schmitz
Keyword(s):  
Interface States ◽  
Mos Structures

Defect structure and generation of interface states in MOS structures

1986 ◽  
Vol 29 (8) ◽  
pp. 829-840 ◽  
Author(s):  
L. Do Thanh ◽  
M. Aslam ◽  
P. Balk
Keyword(s):  
Defect Structure ◽  
Interface States ◽  
Mos Structures
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