Development of hydrogenated amorphous silicon sensors for diagnostic X-ray imaging

1991 ◽  
Vol 38 (2) ◽  
pp. 636-640 ◽  
Author(s):  
L.E. Antonuk ◽  
C.W. Kim ◽  
J. Boudry ◽  
J. Yorkston ◽  
M.J. Longo ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
Silicon Sensors ◽  
X Ray Imaging ◽  
Hydrogenated Amorphous

X-Ray Imaging Sensor Using a Polycrystalline Cadmium Telluride-Hydrogenated Amorphous Silicon Heterojunction

1986 ◽  
Vol 25 (Part 2, No. 11) ◽  
pp. L909-L911 ◽  
Author(s):  
Yoshinori Hatanaka ◽  
Yasuhiro Tomita ◽  
Hidenori Mimura ◽  
Minoru Nogami
Keyword(s):  
Amorphous Silicon ◽  
Cadmium Telluride ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
X Ray Imaging ◽  
Imaging Sensor ◽  
Hydrogenated Amorphous

scholarly journals Erratum: “Demonstration of megavoltage and diagnostic x-ray imaging with hydrogenated amorphous silicon arrays” [Med. Phys. 19 , 1455-1466 (1992)]

1993 ◽  
Vol 20 (3) ◽  
pp. 825-825 ◽  
Author(s):  
Larry E. Antonuk ◽  
John Boudry ◽  
Weidong Huang ◽  
Daniel L. McShan ◽  
Edward J. Morton ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
X Ray Imaging ◽  
Silicon Arrays ◽  
Hydrogenated Amorphous

scholarly journals Demonstration of megavoltage and diagnostic x-ray imaging with hydrogenated amorphous silicon arrays

1992 ◽  
Vol 19 (6) ◽  
pp. 1455-1466 ◽  
Author(s):  
Larry E. Antonuk ◽  
John Boudry ◽  
Weidong Huang ◽  
Daniel L. McShan ◽  
Edward J. Morton ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
X Ray Imaging ◽  
Silicon Arrays ◽  
Hydrogenated Amorphous

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

1999 ◽  
Vol 75 (21) ◽  
pp. 3282-3284 ◽  
Author(s):  
Kin Man Yu ◽  
W. Walukiewicz ◽  
S. Muto ◽  
H.-C. Jin ◽  
J. R. Abelson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray ◽  
Local Structures ◽  
Before And After ◽  
Hydrogenated Amorphous

Stress in hydrogenated amorphous silicon determined by X-ray diffraction

2003 ◽  
Vol 430 (1-2) ◽  
pp. 153-156 ◽  
Author(s):  
M. Härting ◽  
S. Woodford ◽  
D. Knoesen ◽  
R. Bucher ◽  
D.T. Britton
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hydrogenated Amorphous

Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

1989 ◽  
Vol 158 ◽  
Author(s):  
P. John ◽  
I.M. Odeh ◽  
A. Qayyum ◽  
J.I.B. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Silicon Substrates ◽  
Capacitively Coupled ◽  
X Ray ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Sign in / Sign up

Export Citation Format

Share Document