Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

1993 ◽  
Vol 40 (6) ◽  
pp. 1952-1958 ◽  
Author(s):  
F. Roubaud ◽  
C. Dachs ◽  
J.-M. Palau ◽  
J. Gasiot ◽  
P. Tastet
Keyword(s):  
Simulation Study ◽  
Single Event ◽  
Channel Power ◽  
Power Mosfets ◽  
2D Simulation

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

1995 ◽  
Vol 42 (6) ◽  
pp. 1935-1939 ◽  
Author(s):  
C. Dachs ◽  
F. Roubaud ◽  
J.-M. Palau ◽  
G. Bruguier ◽  
J. Gasiot ◽  
...  
Keyword(s):  
Single Event ◽  
Channel Power ◽  
Power Mosfets

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

1996 ◽  
Vol 43 (6) ◽  
pp. 2932-2937 ◽  
Author(s):  
G.H. Johnson ◽  
K.F. Galloway ◽  
R.D. Schrimpf ◽  
J.L. Titus ◽  
C.F. Wheatley ◽  
...  
Keyword(s):  
Cross Section ◽  
Physical Interpretation ◽  
Single Event ◽  
Channel Power ◽  
Power Mosfets

Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)

1992 ◽  
Vol 39 (6) ◽  
pp. 1605-1612 ◽  
Author(s):  
G.H. Johnson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
R. Koga
Keyword(s):  
Temperature Dependence ◽  
Space Application ◽  
Single Event ◽  
Channel Power ◽  
Power Mosfets

Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination

2021 ◽  
pp. 1-5
Author(s):  
Cheng-Hao Yu ◽  
Ying Wang ◽  
Meng-Tian Bao ◽  
Xing-Ji Li ◽  
Jian-Qun Yang ◽  
...  
Keyword(s):  
Simulation Study ◽  
Single Event

Mechanism for single-event burnout of power MOSFETs and its characterization technique

1992 ◽  
Vol 39 (6) ◽  
pp. 1698-1703 ◽  
Author(s):  
S. Kuboyama ◽  
S. Matsuda ◽  
T. Kanno ◽  
T. Ishii
Keyword(s):  
Single Event ◽  
Power Mosfets ◽  
Characterization Technique

3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET

2021 ◽  
Author(s):  
Ting Li ◽  
Dongqing Hu ◽  
Yunpeng Jia ◽  
Xintian Zhou ◽  
Yu Wu
Keyword(s):  
Simulation Study ◽  
3D Simulation ◽  
Single Event ◽  
Power Mosfet

Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS

2021 ◽  
pp. 1-7
Author(s):  
Cheng-Hao Yu ◽  
Ying Wang ◽  
Meng-Tian Bao ◽  
Xing-Ji Li ◽  
Jian-Qun Yang ◽  
...  
Keyword(s):  
Simulation Study ◽  
Single Event
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