Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitors

1992 ◽  
Vol 39 (6) ◽  
pp. 2230-2235 ◽  
Author(s):  
N. Bhat ◽  
J. Vasi
1995 ◽  
Vol 38 (2) ◽  
pp. 477-480 ◽  
Author(s):  
R.M. Patrikar ◽  
R. Lal ◽  
J. Vasi

1992 ◽  
Vol 284 ◽  
Author(s):  
A. D. Marwick ◽  
D. A. Buchanan ◽  
D. J. Dimaria ◽  
Phil Saunders

ABSTRACTRedistribution of hydrogen caused by hot electron injection has been studied in large Al-gate capacitors using internal photemission followed by hydrogen depth profiling with the 15 N nuclear reaction. A large peak of hydrogen (∼ 1015 at /cm2) at the Al/SiO2 interface due to a hydrated layer on the surface of the SiO2 was found to act as a source of hydrogen during the photoinjection. A small fraction of the hydrogen released from this peak was found to be re-trapped near the Si/;SiO2 interface if a field of >1 MV/cm was applied to the SiO2 during the injection. Up to 2 × 1014 atoms/cm2 of hydrogen were found to be trapped at this interface for injected fluences up to 5 C/cm2. These results are discussed in terms of current models of interface state generation involving hydrogen.


Author(s):  
Zhicheng Wu ◽  
Jacopo Franco ◽  
Brecht Truijen ◽  
Philippe Roussel ◽  
Ben Kaczer ◽  
...  

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