A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers

1990 ◽  
Vol 37 (6) ◽  
pp. 2001-2007 ◽  
Author(s):  
N.K. Annamalai ◽  
J.F. Bockman ◽  
N.E. McGruer ◽  
J. Chapski
Keyword(s):  
Buried Oxide ◽  
Oxide Characteristics

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Simulation Method for Buried Oxide Formation of Separation by Implanted Oxygen Structure during Post-Implantation Thermal Annealing

2005 ◽  
Vol 44 (4B) ◽  
pp. 2380-2384 ◽  
Author(s):  
Motoi Nakao ◽  
Koichi Sudoh ◽  
Hirofumi Iikawa ◽  
Hiroshi Iwasaki ◽  
Katsutoshi Izumi
Keyword(s):  
Thermal Annealing ◽  
Simulation Method ◽  
Oxide Formation ◽  
Buried Oxide ◽  
Post Implantation

Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI device

1999 ◽  
Vol 46 (1) ◽  
pp. 251-253 ◽  
Author(s):  
B.M. Tenbroek ◽  
R.J.T. Bunyan ◽  
G. Whiting ◽  
W. Redman-White ◽  
M.J. Uren ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Buried Oxide ◽  
Electrothermal Simulation
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