A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor

2002 ◽  
Vol 50 (4) ◽  
pp. 1101-1108 ◽  
Author(s):  
Zhenqiang Ma ◽  
S. Mohammadi ◽  
P. Bhattacharya ◽  
L.P.B. Katehi ◽  
S.A. Alterovitz ◽  
...  
Keyword(s):  
High Power ◽  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
X Band

High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor

2001 ◽  
Vol 37 (12) ◽  
pp. 790 ◽  
Author(s):  
Z. Ma ◽  
S. Mohammadi ◽  
P. Bhattacharya ◽  
L.P.B. Katehi ◽  
S.A. Alterovitz ◽  
...  
Keyword(s):  
High Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
X Band

Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor

1989 ◽  
Vol 25 (16) ◽  
pp. 1047 ◽  
Author(s):  
F.E. Najjar ◽  
P.M. Enquist ◽  
D.B. Slater ◽  
M.Y. Chen ◽  
K.J. Linden
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Very High

A high-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistor on

1988 ◽  
Vol 9 (8) ◽  
pp. 405-407 ◽  
Author(s):  
T. Won ◽  
C.W. Litton ◽  
H. Morkoc ◽  
A. Yariv
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

1992 ◽  
Vol 28 (14) ◽  
pp. 1344 ◽  
Author(s):  
J.L. Benchimol ◽  
F. Alexandre ◽  
C. Dubon-Chevallier ◽  
F. Héliot ◽  
R. Bourguiga ◽  
...  
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Very High
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