Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs

2002 ◽  
Vol 50 (4) ◽  
pp. 1084-1094 ◽  
Author(s):  
M.S. Shirokov ◽  
S.V. Cherepko ◽  
Xiaohang Du ◽  
J.C.M. Kwang ◽  
D.A. Teeter
Keyword(s):  
High Current ◽  
Signal Modeling ◽  
Large Signal

Large-Signal Characterization of PMN-PT-Ba (90/10/3)

1997 ◽  
Author(s):  
Robert S. Janus ◽  
Mark B. Moffett ◽  
James M. Powers
Keyword(s):  
Large Signal ◽  
Signal Characterization

scholarly journals RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

2021 ◽  
pp. 1-6
Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  
Keyword(s):  
Power Level ◽  
Coplanar Waveguide ◽  
Average Power ◽  
Input Power ◽  
Capacitive Coupling ◽  
Rf Switch ◽  
Large Signal ◽  
Waveguide Transmission ◽  
Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

2017 ◽  
Author(s):  
Tom K. Johansen ◽  
Virginio Midili ◽  
Michele Squartecchia ◽  
Vitaliy Zhurbenko ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Signal Modeling ◽  
Large Signal

On the large-signal modeling of AlGaN/GaN HEMTs for RF switching-mode power amplifiers design

2009 ◽  
Author(s):  
Anwar Jarndal ◽  
Pouya Aflaki ◽  
Louay Degachi ◽  
Ahmed Birafane ◽  
Ammar Kouki ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Signal Modeling ◽  
Large Signal ◽  
Gan Hemts ◽  
Switching Mode
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