V-band GaAs MMIC low-noise and power amplifiers

1988 ◽  
Vol 36 (12) ◽  
pp. 1966-1975 ◽  
Author(s):  
Hing-Loi Hung ◽  
G.M. Hegazi ◽  
T.T. Lee ◽  
F.R. Phelleps ◽  
J.L. Singer ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Low Noise ◽  
V Band

High-performance Ka-band and V-band HEMT low-noise amplifiers

1988 ◽  
Vol 36 (12) ◽  
pp. 1598-1603 ◽  
Author(s):  
K.H.G. Duh ◽  
Pane-Chane Chao ◽  
P.M. Smith ◽  
L.F. Lester ◽  
B.R. Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ka Band ◽  
V Band

scholarly journals Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1222 ◽  
Author(s):  
Longhi ◽  
Pace ◽  
Colangeli ◽  
Ciccognani ◽  
Limiti
Keyword(s):  
Integrated Circuit ◽  
Noise Figure ◽  
State Of The Art ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Wave State ◽  
Millimetre Wave ◽  
Monolithic Microwave Integrated Circuit ◽  
V Band ◽  
And Performance

An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59–66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.

V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs

1999 ◽  
Vol 9 (4) ◽  
pp. 148-150 ◽  
Author(s):  
K. Onodera ◽  
S. Sugitani ◽  
K. Nishimura ◽  
M. Tokumitsu
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
V Band ◽  
Ion Implanted
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