V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs

1999 ◽  
Vol 9 (4) ◽  
pp. 148-150 ◽  
Author(s):  
K. Onodera ◽  
S. Sugitani ◽  
K. Nishimura ◽  
M. Tokumitsu
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
V Band ◽  
Ion Implanted

High-performance Ka-band and V-band HEMT low-noise amplifiers

1988 ◽  
Vol 36 (12) ◽  
pp. 1598-1603 ◽  
Author(s):  
K.H.G. Duh ◽  
Pane-Chane Chao ◽  
P.M. Smith ◽  
L.F. Lester ◽  
B.R. Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ka Band ◽  
V Band

scholarly journals Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1222 ◽  
Author(s):  
Longhi ◽  
Pace ◽  
Colangeli ◽  
Ciccognani ◽  
Limiti
Keyword(s):  
Integrated Circuit ◽  
Noise Figure ◽  
State Of The Art ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Wave State ◽  
Millimetre Wave ◽  
Monolithic Microwave Integrated Circuit ◽  
V Band ◽  
And Performance

An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59–66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.

Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band

2000 ◽  
Vol 48 (7) ◽  
pp. 1283-1286 ◽  
Author(s):  
J.M. Tanskanen ◽  
P. Kangaslahti ◽  
H. Ahtola ◽  
P. Jukkala ◽  
T. Karttaavi ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
V Band

High performance V-band low noise amplifiers

2003 ◽  
Author(s):  
S. Vaughn ◽  
K. White ◽  
U.K. Mishra ◽  
M.J. Delaney ◽  
P. Greiling ◽  
...  
Keyword(s):  
High Performance ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
V Band

44 GHz hybrid low noise amplifiers using ion-implanted In/sub x/Ga/sub 1-x/As MESFETs

2002 ◽  
Author(s):  
C.L. Lau ◽  
M. Feng ◽  
G.W. Wang ◽  
T. Lepkowski ◽  
Y. Chang ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
Ion Implanted

Monolithic V-band pseudomorphic-MODFET low-noise amplifiers

2003 ◽  
Author(s):  
G. Metze ◽  
A. Cornfeld ◽  
J. Singer ◽  
H. Carlson ◽  
E. Chang ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
V Band

Cryogenic MMIC low-noise amplifiers for V-band

2017 ◽  
Author(s):  
Mikko Varonen ◽  
Xiaobing Mei ◽  
Stephen Sarkozy ◽  
Lorene Samoska ◽  
Pekka Kangaslahti ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
V Band
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