Effects of surface/interface morphology on giant magnetoresistance and magnetic field sensitivity of NiO-based spin-valves

1997 ◽  
Vol 33 (5) ◽  
pp. 3550-3552 ◽  
Author(s):  
De-Hua Han ◽  
Jian-Gang Zhu ◽  
J.H. Judy ◽  
J.M. Sivertsen
1995 ◽  
Vol 148 (1-2) ◽  
pp. 329-330 ◽  
Author(s):  
H. Kano ◽  
A. Okabe ◽  
K. Kagawa ◽  
A. Suzuki ◽  
T. Yaoi ◽  
...  

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.


2013 ◽  
Vol 113 (2) ◽  
pp. 023911 ◽  
Author(s):  
Syed Rizwan ◽  
S. Zhang ◽  
Tian Yu ◽  
Y. G. Zhao ◽  
X. F. Han

2012 ◽  
Vol 111 (7) ◽  
pp. 07E503 ◽  
Author(s):  
Lei Chen ◽  
Ping Li ◽  
Yumei Wen ◽  
Jing Qiu

2001 ◽  
Vol 91 (1-2) ◽  
pp. 173-176 ◽  
Author(s):  
A.I Savchuk ◽  
P.I Nikitin ◽  
S.Yu Paranchych ◽  
M.D Andriychuk ◽  
S.I Nikitin

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