Spin scattering asymmetric coefficients and enhanced specific interfacial resistance of fully epitaxial current-perpendicular-to-plane giant magnetoresistance spin valves using alternate monatomic layered [Fe/Co]n and a Ag spacer layer

2011 ◽  
Vol 109 (7) ◽  
pp. 07C510 ◽  
Author(s):  
J. W. Jung ◽  
R. Shiozaki ◽  
M. Doi ◽  
M. Sahashi
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valves ◽  
Interfacial Resistance ◽  
Spacer Layer ◽  
Spin Scattering ◽  
Current Perpendicular To Plane

Polycrystalline current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co2Mn(Ga0.25Ge0.75) Heusler alloy

2013 ◽  
Vol 114 (5) ◽  
pp. 053910 ◽  
Author(s):  
Ye Du ◽  
T. M. Nakatani ◽  
Y. K. Takahashi ◽  
N. Hase ◽  
T. Furubayashi ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Spin Valves ◽  
Current Perpendicular To Plane

Effect of inserted Cu on current-perpendicular-to-plane-giant magnetoresistance of Fe50Co50 spin valves

2003 ◽  
Vol 93 (10) ◽  
pp. 7915-7917 ◽  
Author(s):  
H. Yuasa ◽  
H. Fukuzawa ◽  
H. Iwasaki ◽  
M. Yoshikawa ◽  
M. Takagishi ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valves ◽  
Current Perpendicular To Plane

scholarly journals COMPARATIVE STUDY OF SPIN INJECTION AND TRANSPORT IN Alq3 AND Co–PHTHALOCYANINE-BASED ORGANIC SPIN VALVES

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440009 ◽  
Author(s):  
SAYANI MAJUMDAR ◽  
SUKUMAR DEY ◽  
HANNU HUHTINEN ◽  
JOHNNY DAHL ◽  
MARJUKKA TUOMINEN ◽  
...  
Keyword(s):  
Single Molecule ◽  
Giant Magnetoresistance ◽  
Chemical Reactivity ◽  
Spin Injection ◽  
Spin Valve ◽  
Spin Valves ◽  
Half Metallic ◽  
High Expectations ◽  
Spacer Layer ◽  
Spin Polarized

Recent experimental reports suggest the formation of a highly spin-polarized interface ("spinterface") between a ferromagnetic (FM) Cobalt ( Co ) electrode and a metal-phthalocyanine (Pc) molecule. Another report shows an almost 60% giant magnetoresistance (GMR) response measured on Co / H 2 Pc -based single molecule spin valves. In this paper, we compare the spin injection and transport properties of organic spin valves with two different organic spacers, namely Tris(8-hydroxyquinolinato) aluminum ( Alq 3) and CoPc sandwiched between half-metallic La 0.7 Sr 0.3 MnO 3 (LSMO) and Co electrodes. Alq 3-based spin valves exhibit clear and reproducible spin valve switching with almost 35% negative GMR at 10 K, in accordance with previous reports. In contrast, cobalt-pthalocyanine ( CoPc )-based spin valves fail to show clear GMR response above noise level despite high expectations based on recent reports. Investigations of electronic, magnetic and magnetotransport properties of electrode/spacer interfaces of LSMO/ CoPc / Co devices offer three plausible explanations for the absence of GMR: (1) CoPc films are strongly chemisorbed on the LSMO surface. This improves the LSMO magnetic properties but also induces local traps at the LSMO interface for spin-polarized charge carriers. (2) At the Co / CoPc interface, diffusion of Co atoms into the organic semiconductor (OS) layer and chemical reactivity between Co and the OS deteriorates the FM properties of Co . This renders the Co / CoPc interface as unsuitable for efficient spin injection. (3) The presence of heavy Co atoms in CoPc leads to large spin–orbit coupling in the spacer. The spin relaxation time in the CoPc layer is therefore considerably smaller compared to Alq 3. Based on these findings, we suggest that the absence of GMR in CoPc -based spin valves is caused by a combined effect of inefficient spin injection from FM contacts and poor spin transport in the CoPc spacer layer.

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