Analyses of stacking fault density in Co-alloy thin films by high-resolution transmission electron microscopy

1996 ◽  
Vol 32 (5) ◽  
pp. 3605-3607 ◽  
Author(s):  
A. Ishikawa ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Stacking Fault ◽  
Fault Density ◽  
Transmission Electron

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Temperature Gradient ◽  
Defect Structure ◽  
Temperature Gradients ◽  
Structural Quality ◽  
Fault Density ◽  
Transmission Electron

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

scholarly journals Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5107
Author(s):  
Zhen Yang ◽  
Zhiping Zou ◽  
Zeyang Zhang ◽  
Yubo Xing ◽  
Tao Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Single Crystal ◽  
Microstructure Evolution ◽  
Cavity Growth ◽  
Stacking Fault ◽  
Structural Defects ◽  
Dislocation Loops ◽  
Transmission Electron

Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.

Microstructure of Cr (N,O) thin films studied by high resolution transmission electron microscopy

2017 ◽  
Vol 625 ◽  
pp. 111-114 ◽  
Author(s):  
Kazuma Suzuki ◽  
Hisayuki Suematsu ◽  
Gordon James Thorogood ◽  
Tsuneo Suzuki
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Transmission Electron
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