Effect of ion bombardment and bias fielding for [Ni/sub 81/Fe/sub 19//Cu] multilayers with giant magnetoresistance deposited by dual ion beam sputtering

1995 ◽  
Vol 31 (6) ◽  
pp. 4103-4105 ◽  
Author(s):  
Y. Miyamoto ◽  
T. Yoshitani ◽  
S. Nakagawa ◽  
M. Naoe
Keyword(s):  
Giant Magnetoresistance ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Differences between Sputtering Methods in The Formation of Amorphous Magnetic Alloy Films

1985 ◽  
Vol 58 ◽  
Author(s):  
Y. Hoshi ◽  
M. Naoe
Keyword(s):  
Ion Beam ◽  
Film Surface ◽  
Ion Bombardment ◽  
Plasma Potential ◽  
Magnetic Alloy ◽  
Ion Beam Sputtering ◽  
Amorphous Films ◽  
Beam Sputtering ◽  
Amorphous Structures ◽  
Dual Ion Beam Sputtering

ABSTRACTFe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum content of Si or Ta to obtain amorphous films decreases as the plasma potential increases. These results indicate that the ion bombardment suppresses the growth of crystallites and promotes the formation of the films with amorphous structures. This is confirmed by the deposition of Co-Ta and Co-Zr amorphous films under the condition of various amount of ion bombardment by using a DIB sputtering system.

Investigation of TiC films synthesized by low energy ion bombardment

1994 ◽  
Vol 9 (9) ◽  
pp. 2355-2361 ◽  
Author(s):  
Xiao-Ming He ◽  
Wen-Zhi Li ◽  
Heng-De Li
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Low Friction ◽  
Aisi 52100 ◽  
Beam Sputtering ◽  
Aisi 52100 Steel ◽  
Dual Ion Beam Sputtering

Low energy bombardment of CHn+ at 100-800 eV has been used to prepare TiC film at room temperature by dual ion beam sputtering. The ion bombardment energies and densities obviously affect the metallographic morphology, the crystalline orientation, and constituent ratio of TiC films. TiC films formed under 200-600 eV CHn+ bombarding with 120-190 μA/cm2 possess much finer and compact microstructure in the compressive stress state. Its hardness is in the range of 2650-2880 kgf/mm2. The tribological tests indicate that TiC films synthesized on AISI 52100 steel by DIBS with low energy bombardment exhibit low friction coefficient and good wear resistance.

scholarly journals Blue electroluminescence from Sb-ZnO/Cd-ZnO/Ga-ZnO heterojunction diode fabricated by dual ion beam sputtering

2014 ◽  
Vol 22 (25) ◽  
pp. 30983 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Vishnu Awasthi ◽  
Shruti Verma ◽  
Shaibal Mukherjee
Keyword(s):  
Ion Beam ◽  
Heterojunction Diode ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Ultra-low stress high reflective film by dual-ion-beam sputtering deposition

2021 ◽  
Vol 61 (03) ◽  
Author(s):  
Jinlin Bai ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Lishuan Wang ◽  
Xiao Yang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

The influence of secondary ion beam irradiation on the formation of Si nanocrystals during dual ion beam sputtering

2005 ◽  
Vol 478 (1-2) ◽  
pp. 116-120 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Sputtering ◽  
Ion Beam Irradiation ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Secondary Ion

Epitaxial growth of MgO thin films on silicon by dual ion beam sputtering

1993 ◽  
Vol 223 (1) ◽  
pp. 11-13 ◽  
Author(s):  
Yijie Li ◽  
Guangcheng Xiong ◽  
Guijun Lian ◽  
Jie Li ◽  
Zizhao Gan
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering
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