A high frequency stray-immune capacitance transducer based on the charge transfer principle

1988 ◽  
Vol 37 (3) ◽  
pp. 368-373 ◽  
Author(s):  
S. Huang ◽  
R.G. Green ◽  
A. Plaskowski ◽  
M.S. Beck
1997 ◽  
Vol 116 (1) ◽  
pp. 135-142 ◽  
Author(s):  
Larry R. Dalton ◽  
Aaron W. Harper ◽  
Shajing Sun ◽  
William H. Steier ◽  
Robert V. Mustacich ◽  
...  

1975 ◽  
Vol 18 (2) ◽  
pp. 307-308
Author(s):  
B. I. Yavorskii ◽  
Ya. V. Buchinskii ◽  
M. A. Duda

1999 ◽  
Vol 19 (1-4) ◽  
pp. 385-387
Author(s):  
Chengfei Wang ◽  
Boris Akhremitchev ◽  
Gilbert C. Walker

We present charge transfer absorption, resonance Raman and time-resolved infrared spectral data for (CN)5FeCNRu(NH3)5− in various solvents. The transient infrared spectra and anisotropies reveal both non-equilibrium vibrational populations of high frequency modes and local solvent heating.


2019 ◽  
Vol 61 (11) ◽  
pp. 2030
Author(s):  
С.Н. Мустафаева ◽  
М.М. Асадов

The frequency dependences of the real (ε) and imaginary (ε ″) components of the complex dielectric constant, tangent of dielectric loss (tan) and ac conductivity (σac) of the obtained TlIn1-хErхS2 (0  x  0.01) crystals have been studied in the frequency range f = 5104–3.5107 Hz. It is established that in TlIn1-хErхS2 a relaxation dispersion of ε and ε″ takes place. The effect of erbium concentration (Er) in TlIn1-хErхS2 crystals on their dielectric coefficients was studied. In the high frequency range, the ac conductivity of TlIn1-хErхS2 crystals obeyed the σac ~ f 0.8 law, which is characteristic of a hopping charge transfer mechanism at states localized near the Fermi level. The parameters of states localized in the band gap and the influence of the chemical composition of the TlIn1-хErхS2 crystals on these parameters are estimated.


1988 ◽  
Vol 31 (1) ◽  
pp. 121-123
Author(s):  
L.Shankar Narayanan ◽  
A.B. Bhattacharyya ◽  
Sudhir Chandra

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