An accurate and simplified small signal parameter extraction method for GaN HEMT

2019 ◽  
Vol 47 (6) ◽  
pp. 941-953 ◽  
Author(s):  
Ahmad Khusro ◽  
Mohammad S. Hashmi ◽  
Abdul Quaiyum Ansari ◽  
Aditya Mishra ◽  
Mohammad Tarique
Keyword(s):  
Extraction Method ◽  
Parameter Extraction ◽  
Small Signal ◽  
Signal Parameter ◽  
Gan Hemt

Reliable Parameter Extraction Method Applied to an enhanced GaN HEMT small-signal model

2021 ◽  
pp. 108228
Author(s):  
Shaowei Wang ◽  
Jincan Zhang ◽  
Na Li ◽  
Min Liu ◽  
Bo Liu ◽  
...  
Keyword(s):  
Extraction Method ◽  
Parameter Extraction ◽  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model ◽  
Reliable Parameter

Inaln/GaN HEMT Small-Signal Parameter Extraction

2013 ◽  
Vol 690-693 ◽  
pp. 564-568
Author(s):  
Xiao Wei Zhang ◽  
Peng Xu ◽  
Ke Jin Jia ◽  
Zhi Hong Feng ◽  
Zheng Ping Zhao
Keyword(s):  
Parameter Extraction ◽  
Test Structure ◽  
Parameter Method ◽  
Small Signal ◽  
Signal Parameter ◽  
Parasitic Inductance ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
S Parameter ◽  
Device Technology

We use S-Parameter Methodto extract device parameter of InAlN/GaN HEMT in this paper. We find thatparasitic capacitance and parasitic inductance can be extracted in traditionaltest structure method, but do nothing about parasitic resistor. Cold parameter methodcan extract parasitic resistor efficiently, but there is greater error inparasitic capacitance and parasitic inductance extraction. We propose a methodwhich combines test structure method and cold parameter method to extract parasitic parameteraccurately. We can acquire intrinsic parameters through getting rid ofparasitism parameters, and can fitting test outcome satisfactorily. It canreflect accurately the physical characteristics of GaN HEMT devices, and givesfeedback and guidance to device technology at the same time.

A scalable and multibias parameter extraction method for a small-signal GaN HEMT model

2018 ◽  
Vol 31 (5) ◽  
pp. e2347 ◽  
Author(s):  
Yongbo Chen ◽  
Yuehang Xu ◽  
Feng Wang ◽  
Changsi Wang ◽  
Qingzhi Wu ◽  
...  
Keyword(s):  
Extraction Method ◽  
Parameter Extraction ◽  
Small Signal ◽  
Gan Hemt

A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model

2005 ◽  
Vol 10 (2) ◽  
pp. 405-409
Author(s):  
Shi Xin-zhi ◽  
Liu Hai-wen ◽  
Sun Xiao-wei ◽  
Che Yan-feng ◽  
Cheng Zhi-qun ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Extraction Method ◽  
Parameter Extraction ◽  
Bipolar Transistors ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model
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