Increased hot-carrier effects using SiGe layers in vertical surrounding-gate MOSFETs

2001 ◽  
Vol 48 (12) ◽  
pp. 2690-2694 ◽  
Author(s):  
C.K. Date ◽  
J.D. Plummer
Keyword(s):  
Hot Carrier ◽  
Surrounding Gate ◽  
Hot Carrier Effects

Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

Electrical characteristics and hot carrier effects in quantum well solar cells

2017 ◽  
Author(s):  
Dac-Trung Nguyen ◽  
Laurent Lombez ◽  
Francois Gibelli ◽  
Myriam Paire ◽  
Soline Boyer-Richard ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Electrical Characteristics ◽  
Hot Carrier ◽  
Hot Carrier Effects

scholarly journals Floating Body and Hot Carrier Effects in Ultra-Thin Film SOI MOSFETs

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-49-C3-54 ◽  
Author(s):  
S.-H. Renn ◽  
C. Raynaud ◽  
F. Balestra
Keyword(s):  
Thin Film ◽  
Floating Body ◽  
Hot Carrier ◽  
Hot Carrier Effects ◽  
Ultra Thin Film

Hot carrier effects of H-shaped SOI-NMOS

2014 ◽  
Author(s):  
Binhong Li ◽  
Jiantou Gao ◽  
Kai Zhao ◽  
Xing Zhao ◽  
Fang Yu ◽  
...  
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Effects

Quantum Dot Solar Cells

2014 ◽  
pp. 406-429
Author(s):  
Yoshitaka Okada ◽  
Katsuhisa Yoshida ◽  
Yasushi Shoji
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Research Topics ◽  
Intermediate Band ◽  
Hot Carrier ◽  
Quantum Dot Solar Cells ◽  
High Efficiency Solar Cells ◽  
Hot Carrier Effects ◽  
Low Dimensional

Advanced concepts for high efficiency solar cells such as hot carrier effects, Multi-Exciton Generation (MEG), and Intermediate-Band (IB) absorption in low-dimensional nanostructures are under focused research topics in recent years. Among various potential approaches, this chapter is devoted to the device physics and development of the state-of-the-art technologies for quantum dot-based IB solar cells.

AC Hot-Carrier Effects in Scaled MOS Devices

1991 ◽  
Author(s):  
Eiji Takeda ◽  
Ryuichi Izawa ◽  
Kazunori Umeda ◽  
Ryo Nagai
Keyword(s):  
Hot Carrier ◽  
Mos Devices ◽  
Hot Carrier Effects
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