A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers

Yue Tan; M. Kumar;  Jun Cai; J.K.O. Sin

doi:10.1109/16.954488

A SOI LDMOS technology compatible with CMOS, BJT, and passive components for fully-integrated RF power amplifiers

IEEE Transactions on Electron Devices ◽

10.1109/16.954488 ◽

2001 ◽

Vol 48 (10) ◽

pp. 2428-2433 ◽

Cited By ~ 20

Author(s):

Yue Tan ◽

M. Kumar ◽

Jun Cai ◽

J.K.O. Sin

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Rf Power ◽

Passive Components ◽

Fully Integrated

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A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers

IEEE Electron Device Letters ◽

10.1109/55.821677 ◽

2000 ◽

Vol 21 (2) ◽

pp. 82-84 ◽

Cited By ~ 18

Author(s):

Y. Tan ◽

M. Kumar ◽

J.K.O. Sin ◽

J. Cai ◽

J. Lau

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Rf Power ◽

Passive Components

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A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856790 ◽

2002 ◽

Cited By ~ 4

Author(s):

Y. Tan ◽

M. Kumar ◽

J.K.O. Sin ◽

L. Shi ◽

J. Lau

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Rf Power ◽

Fully Integrated

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ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR

2008 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.2008.4541662 ◽

2008 ◽

Author(s):

Ming-Dou Ker ◽

Chun-Yu Lin ◽

Guo-Xuan Meng

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Rf Power ◽

Fully Integrated ◽

Esd Protection ◽

Cmos Rf

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Efficiency based design flow for fully-integrated class C RF power amplifiers in nanometric CMOS

Proceedings of 2010 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.2010.5537207 ◽

2010 ◽

Cited By ~ 4

Author(s):

Nicolas Barabino ◽

Rafaella Fiorelli ◽

Fernando Silveira

Keyword(s):

Power Amplifiers ◽

Design Flow ◽

Rf Power Amplifiers ◽

Rf Power ◽

Fully Integrated ◽

Class C

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BEHAVIORAL MODELING OF RF POWER AMPLIFIERS WITH MEMORY EFFECTS USING ORTHONORMAL HERMITE POLYNOMIAL BASIS NEURAL NETWORK

Progress In Electromagnetics Research C ◽

10.2528/pierc12091903 ◽

2013 ◽

Vol 34 ◽

pp. 239-251 ◽

Cited By ~ 3

Author(s):

Xiao-Hui Yuan ◽

Quanyuan Feng

Keyword(s):

Neural Network ◽

Power Amplifiers ◽

Hermite Polynomial ◽

Memory Effects ◽

Behavioral Modeling ◽

Polynomial Basis ◽

Rf Power Amplifiers ◽

Rf Power ◽

With Memory

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A CMOS Envelope Tracking Supply Convertor for RF Power Amplifiers of 5G NR Mobile Terminals

IEEE Transactions on Power Electronics ◽

10.1109/tpel.2020.3039786 ◽

2020 ◽

pp. 1-1

Author(s):

Yu-Chen Lin ◽

Yi-Jan Emery Chen

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Rf Power ◽

Envelope Tracking ◽

Mobile Terminals

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Adaptive Digital Predistortion of RF Power Amplifiers Based on Memory Polynomial Model and Indirect Learning Architecture

2020 International Conference Engineering and Telecommunication (En&T) ◽

10.1109/ent50437.2020.9431300 ◽

2020 ◽

Author(s):

Van-Kien Vu ◽

Van-Nghia Tran

Keyword(s):

Power Amplifiers ◽

Polynomial Model ◽

Rf Power Amplifiers ◽

Digital Predistortion ◽

Rf Power ◽

Memory Polynomial

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33.9 A Hybrid Switching Supply Modulator Achieving 130MHz Envelope-Tracking Bandwidth and 10W Output Power for 2G/3G/LTE/NR RF Power Amplifiers

2021 IEEE International Solid- State Circuits Conference (ISSCC) ◽

10.1109/isscc42613.2021.9365986 ◽

2021 ◽

Author(s):

Dongsu Kim ◽

Jun-Suk Bang ◽

Jongbeom Baek ◽

Seungchan Park ◽

Young-Ho Jung ◽

...

Keyword(s):

Output Power ◽

Power Amplifiers ◽

Rf Power Amplifiers ◽

Rf Power ◽

Envelope Tracking ◽

Switching Supply ◽

Hybrid Switching

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Gaussian Pulse Characterization of RF Power Amplifiers

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2021.3054049 ◽

2021 ◽

Vol 31 (4) ◽

pp. 417-420

Author(s):

Tommaso Cappello ◽

Zoya Popovic ◽

Kevin Morris ◽

Angelo Cappello

Keyword(s):

Power Amplifiers ◽

Gaussian Pulse ◽

Rf Power Amplifiers ◽

Rf Power ◽

Pulse Characterization

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Boosted Model Tree-Based Behavioral Modeling for Digital Predistortion of RF Power Amplifiers

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2021.3081096 ◽

2021 ◽

pp. 1-1

Author(s):

Yue Li ◽

Xiaoyu Wang ◽

Jingzhou Pang ◽

Anding Zhu

Keyword(s):

Power Amplifiers ◽

Behavioral Modeling ◽

Rf Power Amplifiers ◽

Digital Predistortion ◽

Rf Power ◽

Model Tree

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