Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

M. Roschke; F. Schwierz

doi:10.1109/16.930664

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

IEEE Transactions on Electron Devices ◽

10.1109/16.930664 ◽

2001 ◽

Vol 48 (7) ◽

pp. 1442-1447 ◽

Cited By ~ 226

Author(s):

M. Roschke ◽

F. Schwierz

Keyword(s):

Electron Mobility ◽

Mobility Models

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Efficacy of Electron Mobility Models in Hybrid-PIC Hall Thruster Simulations

44th AIAA/ASME/SAE/ASEE Joint Propulsion Conference & Exhibit ◽

10.2514/6.2008-4924 ◽

2008 ◽

Cited By ~ 29

Author(s):

Richard Hofer ◽

Ira Katz ◽

Dan Goebel ◽

Kristina Jameson ◽

Regina Sullivan ◽

...

Keyword(s):

Electron Mobility ◽

Hall Thruster ◽

Mobility Models

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On electron mobility models for liquid hydrocarbons

The Journal of Chemical Physics ◽

10.1063/1.431629 ◽

1975 ◽

Vol 63 (6) ◽

pp. 2765-2766 ◽

Cited By ~ 9

Author(s):

J.‐P. Dodelet ◽

K. Shinsaka ◽

G. R. Freeman

Keyword(s):

Electron Mobility ◽

Mobility Models ◽

Liquid Hydrocarbons

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Temperature-dependent hole and electron mobility models for CMOS circuit simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.469403 ◽

1995 ◽

Vol 42 (11) ◽

pp. 1956-1961 ◽

Cited By ~ 4

Author(s):

Kyeong-Sik Min ◽

Kwyro Lee

Keyword(s):

Electron Mobility ◽

Circuit Simulation ◽

Mobility Models ◽

Cmos Circuit ◽

Temperature Dependent

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Low-Field Electron Mobility Models for Bulk GaN and AlGaN/GaN 2DEGs

10.7567/ssdm.2005.i-7-3 ◽

2005 ◽

Cited By ~ 1

Author(s):

Frank Schwierz

Keyword(s):

Electron Mobility ◽

Mobility Models ◽

Low Field ◽

Field Electron ◽

Bulk Gan

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Temperature dependent universal hole and electron mobility models for CMOS circuit simulation

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings ◽

10.1109/tencon.1995.496375 ◽

2002 ◽

Author(s):

Kyeong-Sik Min ◽

K. Lee

Keyword(s):

Electron Mobility ◽

Circuit Simulation ◽

Mobility Models ◽

Cmos Circuit ◽

Temperature Dependent

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On the Universal Generation of Mobility Models

10.21236/ada522737 ◽

2010 ◽

Cited By ~ 4

Author(s):

Alberta Medina ◽

Gonca Gursun ◽

Prithwish Basu ◽

Ibrahim Matta

Keyword(s):

Mobility Models

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Influence of hydrostatic pressure on the electron mobility and the correlation properties of a mixed-valence system of iron impurity ions in HgSe:Fe crystals

Semiconductors ◽

10.1134/1.1187221 ◽

1997 ◽

Vol 31 (6) ◽

pp. 580

Author(s):

I. G. Kuleev

Keyword(s):

Hydrostatic Pressure ◽

Electron Mobility ◽

Mixed Valence ◽

Iron Impurity ◽

Impurity Ions ◽

Correlation Properties

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Demonstration of individual mobility models

IEE Irish Signals and Systems Conference 2005 ◽

10.1049/cp:20050311 ◽

2005 ◽

Author(s):

P. Scully

Keyword(s):

Mobility Models ◽

Individual Mobility

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A life course approach to total tooth loss: Testing the sensitive period, accumulation, and social mobility models in the Health and Retirement Study

Community Dentistry And Oral Epidemiology ◽

10.1111/cdoe.12463 ◽

2019 ◽

Vol 47 (4) ◽

pp. 333-339 ◽

Cited By ~ 2

Author(s):

Haena Lee

Keyword(s):

Life Course ◽

Social Mobility ◽

Tooth Loss ◽

Sensitive Period ◽

Health And Retirement Study ◽

Mobility Models ◽

Life Course Approach ◽

Retirement Study

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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