On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor

2001 ◽  
Vol 48 (6) ◽  
pp. 1222-1224 ◽  
Author(s):  
M. Jagadesh Kumar ◽  
V.S. Patri
Keyword(s):  
Transit Time ◽  
Bipolar Transistor ◽  
Iterative Schemes ◽  
Doping Profiles ◽  
Base Doping

Base transit time of a Heterojunction Bipolar Transistor with Gaussian doped base

2010 ◽  
Author(s):  
S. M. Moududul Islam ◽  
Yeasir Arafat ◽  
Iqbal Bahar Chowdhury ◽  
M. Ziaur Rahman Khan ◽  
M. M. Shahidul Hassan
Keyword(s):  
Transit Time ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

The Contribution of Beam Processing to Present and Future Integrated Circuit Technologies

1983 ◽  
Vol 13 ◽  
Author(s):  
C Hill
Keyword(s):  
Pulse Laser ◽  
Present State ◽  
Integrated Circuit ◽  
Bipolar Transistor ◽  
Device Development ◽  
Processing Techniques ◽  
Doping Profiles ◽  
Controlled Doping ◽  
Circuit Technology ◽  
Base Structure

ABSTRACTA brief history and present state of beam processing techniques and applications to silicon integrated circuit technology are given. The viability of incorporating pulse-laser controlled doping profiles into the emitter-base structure of an advanced bipolar transistor is discussed. The areas of present I.C. technology which will constrain future device development are identified, and the contribution that beam processing can make in removing these constraints is discussed. The beam processing techniques most likely to be found in future I.C. technologies are described.

Distribution of base dopant for transit time minimization in a bipolar transistor

1996 ◽  
Vol 43 (1) ◽  
pp. 170-172 ◽  
Author(s):  
S.S. Winterton ◽  
S. Searles ◽  
C.J. Peters ◽  
N.G. Tarr ◽  
D.L. Pulfrey
Keyword(s):  
Transit Time ◽  
Bipolar Transistor ◽  
Time Minimization

Analytical model for base transit time of a bipolar transistor with Gaussian-doped base

2006 ◽  
Vol 50 (3) ◽  
pp. 327-332 ◽  
Author(s):  
M.M. Shahidul Hassan ◽  
Touhidur Rahman ◽  
Md. Ziaur Rahman Khan
Keyword(s):  
Analytical Model ◽  
Transit Time ◽  
Bipolar Transistor
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