scholarly journals A physically based relation between extracted threshold voltage and surface potential flat band voltage for MOSFET compact modeling

2001 ◽  
Vol 48 (5) ◽  
pp. 1019-1021 ◽  
Author(s):  
J. Benson ◽  
N.V. D'Halleweyn ◽  
W. Redman-White ◽  
C.A. Easson ◽  
M.J. Uren ◽  
...  
Keyword(s):  
Surface Potential ◽  
Threshold Voltage ◽  
Flat Band ◽  
Compact Modeling ◽  
Flat Band Voltage ◽  
Physically Based

Instability in Amorphous Silicon Dioxide/Amorphous Silicon Structures

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Flat Band ◽  
Transitional Region ◽  
Flat Band Voltage ◽  
Amorphous Silicon Dioxide ◽  
Silicon Structures

ABSTRACTAmorphous insulator/amorphous silicon structures show, under bias-stress conditions, a drift of the electrical characteristics. In the present work, in order to discriminate the main source of instability in amorphous silicon dioxide/amorphous silicon Thin-Film Transistors, the determination of both threshold voltage and flat-band voltage has been performed after bias-stressing the devices with different gate voltages and at different temperatures. Flat-band voltage was determined by the space-charge photomodulation technique. From the close correlation observed between the two quantities, we conclude that the predominant instability mechanism is represented by change in the gate insulator charge at and near the insulator/semiconductor interface. Time evolution of the threshold voltage shifts has been investigated as a function of stress bias and temperature. The data are explained in terms of a new model based on the dispersive charge injection (hopping of electrons via localised states) into the first 2–3 nm of the gate insulator adjacent to die semiconductor layer (transitional region). Possible origin of the transitional region can be related to the reduction of the gate insulator induced by activated hydrogen, as suggested by photoemission experiments performed with synchrotron radiation on SiO2 bombarded with low energy (100 eV) H-ions.

Determination of Defects Concentration from C-V and G-V Curves in a MOSFET Structure

2009 ◽  
Vol 1195 ◽  
Author(s):  
Nadine Abboud ◽  
Roland Habchi
Keyword(s):  
Exposure Time ◽  
Threshold Voltage ◽  
High Field ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Field Exposure ◽  
Gate Oxides ◽  
The Difference ◽  
Charged Defects

AbstractThe gate oxides of Si based MOSFET devices are subjected to a high field in order to induce defects in the oxide bulk and at the Si/SiO2 interface. The defects are characterized by a series of gate to source capacitance and conductance measurements. Shifts in the flat band voltage and the threshold voltage are observed and are related to the position of charged defects. The difference of the equivalent charge between the two types of defects is also determined. Conductance measurements are performed to determine the difference of interface states concentration as a function of the high field exposure time.

Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors

2016 ◽  
Vol 39 ◽  
pp. 17-33 ◽  
Author(s):  
Tamara Rudenko ◽  
Sylvain Barraud ◽  
Yordan M. Georgiev ◽  
Vladimir Lysenko ◽  
Alexei N. Nazarov
Keyword(s):  
Experimental Data ◽  
Threshold Voltage ◽  
Carrier Mobility ◽  
Doping Concentration ◽  
Series Resistance ◽  
Electrical Characterization ◽  
Parameter Extraction ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Nanowire Transistors

This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold voltage, flat-band voltage, doping concentration, carrier mobility, and parasitic series resistance. The applicability and limitations of different methods are analyzed using numerical simulations and experimental data for planar and tri-gate nanowire JL transistors with various nanowire widths.

scholarly journals An Approach For Drain Current Modeling Including Quantum Mechanical Effects For A DMDG Junctionless Field Effect Nanowire Transistor

2021 ◽  
Author(s):  
Nipanka Bora
Keyword(s):  
Surface Potential ◽  
Threshold Voltage ◽  
Field Effect ◽  
Drain Current ◽  
Compact Modeling ◽  
Threshold Voltage Shift ◽  
Nanowire Transistor ◽  
Dual Material ◽  
Potential Threshold ◽  
Drain Conductance

Abstract This paper presents the effects of quantum confinements on the surface potential, threshold voltage, drain current, transconductance, and drain conductance of a Dual Material Double Gate Junctionless Field Effect Nanowire Transistor (DMDG-JLFENT). The carrier energy quantization on the threshold voltage of a DMDG-JLFENT is modeled, and subsequently, other parameters like drain current were analytically presented. The QME considered here is obtained under the quantum confinement condition for an ultra-thin channel, i.e., below 10 nm of Si thickness. The threshold voltage shift due to QME can be used as a quantum correction term for compact modeling of junctionless transistors. The analytical model proposed for surface potential, threshold voltage, drain current, transconductance, and drain conductance were verified by TCAD 3-D quantum simulation results which makes it suitable for SPICE compact modeling.

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET

2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra
Keyword(s):  
Analytical Model ◽  
Surface Potential ◽  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Junction Depth ◽  
Short Channel ◽  
Soi Mosfet ◽  
Minimum Surface ◽  
Recessed Channel ◽  
The Impact

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.

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