Ultralow resistance, selectively silicided VDMOS FETs for high-frequency power switching applications fabricated using sidewall oxide spacer technology
1988 ◽
Vol 35
(12)
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pp. 2459
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1988 ◽
Vol 6
(6)
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pp. 1740
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1984 ◽
Vol 131
(1)
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pp. 7
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Keyword(s):
1990 ◽
Vol 25
(2)
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pp. 595-601
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Keyword(s):
2018 ◽
Vol 7
(1)
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pp. 35-42
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Keyword(s):