Langevin forces and generalized transfer fields for noise modeling in deep submicron devices

2000 ◽  
Vol 47 (10) ◽  
pp. 1992-1998 ◽  
Author(s):  
P. Shiktorov ◽  
E. Starikov ◽  
V. Gruzinskis ◽  
T. Gonzalez ◽  
J. Mateos ◽  
...  
Keyword(s):  
Deep Submicron ◽  
Noise Modeling ◽  
Submicron Devices

Silicidation Strategy Of Sub-0.1 μm Junctions for Deep Submicron Devices

1995 ◽  
Vol 402 ◽  
Author(s):  
Jiunn-Yann Tsai ◽  
Carlton M. Osburn ◽  
Steve L. Hsia
Keyword(s):  
Series Resistance ◽  
Deep Submicron ◽  
Silicon On Insulator ◽  
Promising Alternative ◽  
Resistance Increase ◽  
Low Leakage ◽  
Submicron Devices ◽  
Diffusion Source ◽  
Ultra Shallow Junctions ◽  
Silicon Interface

AbstractTwo major concerns for silicidation of ultra-shallow junctions, namely the silicon-consumption- induced junction leakage and the series resistance increase, were compared among conventional post-junction-silicide (PJS) contact, silicide-as-a-diffusion-source (SADS) contact, Silicon-On-Insulator (SOI) contact, and elevated-source-drain (ESD) contact. Even though we found that ESD contacts would be the ultimate solution for both problems, SOI and SADS contacts provide better resistance to silicon-consumption-induced series resistance increase over conventional PJS contact because both are able to maintain a high dopant concentration at the silicide/silicon interface and thus a low specific contact resistivity. While there is no junction leakage concern for SOI contact, the SADS junction is also distinguished by low leakage owing to its lack of implant damage in the silicon substrate and uniformly doped junction along the silicide/silicon interface contour. MOSFET devices with SADS source/drain were demonstrated with quarter-μm technology. Epitaxial cobalt disilicide (CoSi2) was formed using the Ti/Co bilayer technique as a diffusion source. While both ESD and SOI processes still suffer from process complexity, integration and materials issues, we conclude that SADS contacting is a promising alternative for deep submicron devices.

Suppression of boron diffusion in deep submicron devices

2011 ◽  
Vol 29 (6) ◽  
pp. 062201 ◽  
Author(s):  
Michael A. Gribelyuk ◽  
Phil Oldiges ◽  
Paul A. Ronsheim ◽  
Jun Yuan ◽  
Leon Kimball
Keyword(s):  
Deep Submicron ◽  
Boron Diffusion ◽  
Submicron Devices

scholarly journals An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 329-334
Author(s):  
Min Shen ◽  
Wai-Kay Yip ◽  
Ming-C. Cheng ◽  
J. J. Liou
Keyword(s):  
Splitting Method ◽  
Deep Submicron ◽  
Fluid System ◽  
Flux Splitting ◽  
Gaas Mesfet ◽  
Highly Nonlinear ◽  
Submicron Devices ◽  
Efficiency And Effectiveness ◽  
Semiconductor Equations ◽  
Dynamics Problems

The advective upstream splitting method (AUSM) developed for fluid dynamics problems has been applied to solving hydrodynamic semiconductor equations coupled with the Poisson’s equation. In the AUSM, the flux vectors of a fluid system are split into a convective component and a diffusive pressure component. Discretization of these two physically distinct fluxes is thus performed separately in AUSM. Application of the developed hydrodynamic AUSM to a GaAs MESFET with a gate length of 0.1 μm has demonstrated its simplicity, efficiency and effectiveness in dealing with the highly nonlinear hydrodynamic device system.

MODELING AND SIMULATION OF NONLINEAR ELECTRON-HOLE PLASMA IN DEEP SUBMICRON N-MOSFET DEVICES

1999 ◽  
Vol 08 (02) ◽  
pp. 289-304
Author(s):  
K. RAJENDRAN ◽  
S. SAMUDRA GANESH
Keyword(s):  
Impact Ionization ◽  
Chaotic Behavior ◽  
Collision Frequency ◽  
Deep Submicron ◽  
Chaotic Regime ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Submicron Devices ◽  
Non Equilibrium

Computer simulations were done extensively in order to study nonlinear dynamics of laser and non-equilibrium electron-hole plasma interaction in deep submicron n-MOSFET silicon devices. We constructed the modified Duffing kind of nonlinear electron-hole plasma oscillator equation. Nonlinear characteristics of electron-hole plasma by impact ionization in submicron devices manifest a wide diversity of complex chaotic behavior. Collision frequency is found to be the dominant parameter to influence the bifurcation, chaos, hysteresis and bistable effects of electron-hole plasma at deep submicron devices. Small windows of higher period cascade above the critical value of laser parameter (α1α2) in the chaos region are observed. Non-equilibrium electron-hole plasma shows much chaotic regime at lower value of laser frequency (δ). Hysteresis and bistable region of electron-hole plasma are also presented and the conditions for their occurrence are identified. The unstable region completely merge at higher value of effective collision frequency (γ).

Sign in / Sign up

Export Citation Format

Share Document