Compact modeling of high-frequency distortion in silicon integrated bipolar transistors

2000 ◽  
Vol 47 (7) ◽  
pp. 1529-1535 ◽  
Author(s):  
M. Schroter ◽  
D.R. Pehlke ◽  
T.-Y. Lee
Keyword(s):  
High Frequency ◽  
Bipolar Transistors ◽  
Compact Modeling

scholarly journals Sub-THz and THz SiGe HBT Electrical Compact Modeling

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1397
Author(s):  
Bishwadeep Saha ◽  
Sebastien Fregonese ◽  
Anjan Chakravorty ◽  
Soumya Ranjan Panda ◽  
Thomas Zimmer
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
High Frequency ◽  
State Of The Art ◽  
Sensitivity Study ◽  
Compact Modeling ◽  
Process Technology ◽  
Very High Frequency ◽  
Sige Hbt ◽  
Frequency Behavior

From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepared test-structures. Physics-based strategies of extracting the HF parameters are elaborately presented followed by a sensitivity study to see the effects of the variations of HF parameters on certain frequency-dependent characteristics until 500 GHz. Finally, the deployed HICUM model is evaluated against the measured s-parameters of the investigated SiGe HBT until 500 GHz.

Improved compact modeling of output conductance and cutoff frequency of bipolar transistors

2001 ◽  
Vol 36 (9) ◽  
pp. 1390-1398 ◽  
Author(s):  
J.C.J. Paasschens ◽  
W.J. Kloosterman ◽  
R.J. Havens ◽  
H.C. de Graaff
Keyword(s):  
Cutoff Frequency ◽  
Bipolar Transistors ◽  
Compact Modeling ◽  
Output Conductance

SiGe Heteroepitaxy for High Frequency Circuits

1998 ◽  
Vol 525 ◽  
Author(s):  
B. Tillack ◽  
D. Bolze ◽  
G. Fischer ◽  
G. Kissinger ◽  
D. Knoll ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Defect Density ◽  
Process Capability ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Capability Indices ◽  
Data Points ◽  
B Doping ◽  
The Stability

ABSTRACTWe have determined the process capability of Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD) of epitaxial Si/SiGe/Si stacks for heterojunction bipolar transistors (HIBTs). The transistor parameters primarily influenced by the epitaxial characteristics were measured for 600 identically processed 4” wafers. The results demonstrate that it is possible to control accurately the epitaxial process for a 25 nm thick graded SiGe base profile with 20 % Ge and very narrow B doping (5 nm). The pipe limited device yield of about 90 % for an emitter area of 104 μm2 indicates a very low defect density in the epitaxial layer stack. The process capability indices determined from about 40,000 data points demonstrate the stability and capability of the LP(RT)CVD epitaxy with regard to manufacturing requirements.

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