scholarly journals The merits and limitations of local impact ionization theory [APDs]

2000 ◽  
Vol 47 (5) ◽  
pp. 1080-1088 ◽  
Author(s):  
S.A. Plimmer ◽  
J.P.R. David ◽  
D.S. Ong
Keyword(s):  
Impact Ionization ◽  
Local Impact

Lifetime Calculations of MOSFET’s Using Depth-Dependent Non-Local Impact Ionization

1993 ◽  
pp. 469-472
Author(s):  
M. J. van Dort ◽  
J. W. Slotboom ◽  
G. Streutker ◽  
P. H. Woerlee
Keyword(s):  
Impact Ionization ◽  
Non Local ◽  
Local Impact

scholarly journals Non Local Impact Ionization Effects in Semiconductor Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 291-297 ◽  
Author(s):  
Duilio Meglio ◽  
Corrado Cianci ◽  
Aldo Di Carlo ◽  
Paolo Lugli
Keyword(s):  
Carrier Transport ◽  
Impact Ionization ◽  
Semiconductor Devices ◽  
High Energy ◽  
Drift Diffusion ◽  
Non Local ◽  
Local Impact ◽  
Ionization Coefficients ◽  
The Impact ◽  
Space Effects

Impact ionization processes define the breakdown characteristics of semiconductor devices. An accurate description of such phenomenon, however, is limited to very sophisticated device simulators such as Monte Carlo. A new physical model for the impact ionization process is presented, which accounts for dead space effects and high energy carrier transport at a Drift Diffusion level. Such model allows to define universal impact ionization coefficients which are device-geometry independent. By using available experimental data these parameters have been calculated for In0.53Ga0.47As.

Lifetime calculations of MOSFETs using depth-dependent non-local impact ionization

1995 ◽  
Vol 26 (2-3) ◽  
pp. 301-305 ◽  
Author(s):  
M.J. van Dort ◽  
J.W. Slotboom ◽  
G. Streutker ◽  
P.H. Woerlee
Keyword(s):  
Impact Ionization ◽  
Non Local ◽  
Local Impact

Non-local impact ionization in silicon devices

2002 ◽  
Author(s):  
J.W. Slotboom ◽  
G. Streutker ◽  
M.J. van Dort ◽  
P.H. Woerlee ◽  
A. Pruijmboom ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Silicon Devices ◽  
Non Local ◽  
Local Impact

“EDUCAR TRABAJANDO Y PRODUCIENDO”. LA APLICACIÓN DEL PROGRAMA DE EXPANSIÓN Y MEJORAMIENTO DE LA EDUCACIÓN TÉCNICO AGROPECUARIA EN EL NOROESTE ARGENTINO.

2014 ◽  
Vol 2 (2) ◽  
Author(s):  
Laura Lorena Leguizamón
Keyword(s):  
Rural Education ◽  
Latin America ◽  
Technical Education ◽  
Ministry Of Education ◽  
Development Bank ◽  
Palabras Clave ◽  
Local Impact ◽  
America Latina ◽  
La Rioja ◽  
Document Review

El programa de Expansión y Mejoramiento de la Educación Técnica Agropecuaria (E.M.E.T.A.) destinado a la escuela media rural empezó a pensarse para ser aplicado, en la región de América Latina, hacia fines de la década de 1970. En el transcurso de la década de 1980, se presentaron en Argentina, la mayor parte de los diagnósticos provinciales que describían la realidad de este tipo de enseñanza para las diferentes regiones del país. Con financiamiento del Banco Interamericano de Desarrollo (B.I.D.) así como del Ministerio de Educación Argentino se pone en marcha el programa para el total del país. La aplicación del programa difería de acuerdo a la necesidad de cada caso. Se presenta aquí la experiencia de una Escuela Agropecuaria situada en el Noroeste de Argentina, específicamente en la localidad de Chamical, provincia de La Rioja. El propósito, de este escrito, es analizar las formas de aplicación del programa EMETA y el impacto que tuvo el mismo en lo local. Como así también, es nuestra intención, poner a disposición estas experiencias, compartidas por distintas regiones de América Latina, para iniciar el diálogo posible entre las mismas. El método empleado para esta investigación fue mixto, entre revisión documental y entrevistas en profundidad. Como resultado pudimos recuperar la experiencia de aplicación del programa en esta zona de Argentina, también sienta un precedente esencial debido a que no se disponía de material édito específico. Palabras clave: Programa EMETA, Educación Rural en Argentina, Escuela Media, Enseñanza Técnica. Abstract The program called Expansion and Improvement of Agricultural Technical Education (EMETA by its acronym in Spanish), for rural middle schools was meant to be applied in Latin America in the late 1970s. During the 1980s in Argentina, most of the provincial diagnoses describing the reality of this kind of education for each region of the country were presented. .The program started nation-wide with funding from the Inter-American Development Bank (BID) and the Argentinean Ministry of Education. Application differed according to the needs of each case. The experience presented here is that of an Agricultural School located northwest of Argentina, in Chamical, province of La Rioja. The purpose of this paper is to analyze the various forms of application of the EMETA program and is local impact. Such experiences are made available, shared by different regions of Latin America, to start a possible dialogue among them. The method used for this research combined document review and interviews. As a result we were able to recover the application experience of the program in this area of Argentina, setting an important precedent because there was no specific printed material available. Keywords: EMETA Program, Argentinian Rural Education, High School, Technical Education. Recibido: septiembre de 2014Aprobado: noviembre de 2014

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

IMPROVEMENT OF MODELING MODELS OF SUSTAINABLE DEVELOPMENT OF THE CORPORATE INDUSTRY SECTOR

2020 ◽  
Vol 2 (6) ◽  
pp. 97-99
Author(s):  
I. Yu. PUSHKAREV ◽  
Keyword(s):  
Sustainable Development ◽  
Production Systems ◽  
Global Impact ◽  
Industry Sector ◽  
Local Impact ◽  
Points Of View

The article shows that when quantifying the effectiveness of production systems that are reported in accounting, it is necessary to take into account not only the direct and local impact on the environment, but also the indirect, global impact, taking into account various points of view on the benefits and consequences that are part of the desired result.

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