A strategy for modeling of variations due to grain size in polycrystalline thin-film transistors

2000 ◽  
Vol 47 (5) ◽  
pp. 1035-1043 ◽  
Author(s):  
A.W. Wang ◽  
K.C. Saraswat
2005 ◽  
Vol 8 (8) ◽  
pp. G209
Author(s):  
Chun-Hao Tu ◽  
Ting-Chang Chang ◽  
Po-Tsun Liu ◽  
Hsiao-Wen Zan ◽  
Ya-Hsiang Tai ◽  
...  

1997 ◽  
Vol 471 ◽  
Author(s):  
W. Eccleston

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.


2018 ◽  
Vol 42 (13) ◽  
pp. 10969-10975
Author(s):  
Xuesong Wang ◽  
He Wang ◽  
Yao Li ◽  
Ting Xu ◽  
Wei Wang ◽  
...  

A polyurethane material with a high dielectric constant was used to regulate the grain size of p-6P.


2001 ◽  
Vol 80-81 ◽  
pp. 343-348
Author(s):  
H. Toutah ◽  
B. Tala-Ighil ◽  
J.F. Llibre ◽  
T. Mohammed-Brahim ◽  
Youri Helen ◽  
...  

2003 ◽  
Vol 42 (Part 1, No. 6A) ◽  
pp. 3662-3665 ◽  
Author(s):  
Taiki Komoda ◽  
Koji Kita ◽  
Kentaro Kyuno ◽  
Akira Toriumi

2016 ◽  
Vol 7 (11) ◽  
pp. 2143-2150 ◽  
Author(s):  
Yao Li ◽  
He Wang ◽  
Xuesong Wang ◽  
Zuosen Shi ◽  
Donghang Yan ◽  
...  

A series of novel polymers as functional dielectric layers for pentacene thin-film transistors was synthesized and investigated to explore the relationship between the grain size and the charge carrier mobility with a single variable.


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