Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs

2000 ◽  
Vol 47 (4) ◽  
pp. 677-686 ◽  
Author(s):  
S. Mohammadi ◽  
D. Pavlidis ◽  
B. Bayraktaroglu
2013 ◽  
Vol 199 ◽  
pp. 334-343 ◽  
Author(s):  
Marina Santo Zarnik ◽  
Vlasta Sedlakova ◽  
Darko Belavic ◽  
Josef Sikula ◽  
Jiri Majzner ◽  
...  

2004 ◽  
Vol 96 (2) ◽  
pp. 966-969 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
Yu. Bilenko ◽  
P. V. Kosterin ◽  
B. M. Salzberg

2016 ◽  
Vol 16 (3) ◽  
pp. 282-289 ◽  
Author(s):  
Jin Chen ◽  
Yevgeniy S. Puzyrev ◽  
En Xia Zhang ◽  
Daniel M. Fleetwood ◽  
Ronald D. Schrimpf ◽  
...  

Author(s):  
Yayi Chen ◽  
Yuan Liu ◽  
Li Wang ◽  
Bin Li ◽  
Xiaoming Xiong ◽  
...  

2018 ◽  
Vol 58 (2) ◽  
Author(s):  
Justinas Glemža ◽  
Jonas Matukas ◽  
Sandra Pralgauskaitė ◽  
Vilius Palenskis

Low-frequency electrical and optical noise characteristics of a high power white InGaN LED and the cross-correlation coefficient between these fluctuations are investigated during the long-term ageing experiment (28000 h). The analysis of cross-correlation shows that the correlated part of the low-frequency electrical noise, which indicates physical processes in the active area of the LED, varies during the ageing experiment. Two main stages are distinguished considering the rapid changes of the noise characteristics. The initial stage (after the first 1100 h) is followed by the decrease in the noise power at low forward currents and the increase in the light output. The final stage (after 28000 h) is characterized by a strong growth of the low-frequency noise, the decrease of the light output and the increase of the correlated part of electrical and optical fluctuations. These changes mean a failure in the active layer of the LED. The optical output decomposition into two spectral parts, the radiation generated by the LED chip and the radiation generated by the phosphor layer, enables evaluation of the phosphor layer influence on the degradation process of device optical characteristics. Despite the fact that this layer contributes to the variation of the LED chromatic properties, the cross-correlation analysis has shown that the phosphor layer does not act as a possible noise source during the ageing experiment.


Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 13
Author(s):  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Justinas Glemža ◽  
Sandra Pralgauskaitė

Low-frequency noise investigation is a highly sensitive and very informative method for characterization of white nitride-based light-emitting diodes (LEDs) as well as for the evaluation of their degradation. We present a review of quality and reliability investigations of high-power (1 W and 3 W) white light-emitting diodes during long-term aging at the maximum permissible forward current at room temperature. The research was centered on the investigation of blue InGaN and AlInGaN quantum wells (QWs) LEDs covered by a YAG:Ce3+ phosphor layer for white light emission. The current-voltage, light output power, and low-frequency noise characteristics were measured. A broadband silicon photodetector and two-color (blue and red) selective silicon photodetectors were used for the LED output power detection, which makes it possible to separate physical processes related to the initial blue light radiation and the phosphor luminescence. Particular attention was paid to the measurement and interpretation of the simultaneous cross-correlation coefficient between electrical and optical fluctuations. The presented method enables to determine which part of fluctuations originates in the quantum well layer of the LED. The technique using the two-color selective photodetector enables investigation of changes in the noise properties of the main blue light source and the phosphor layer during the long-term aging.


2014 ◽  
Vol 135 (3) ◽  
pp. 1106-1114 ◽  
Author(s):  
Karl Bolin ◽  
Martin Almgren ◽  
Esbjörn Ohlsson ◽  
Ilkka Karasalo

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