Low frequency noise and long-term stability of noncoherent light sources

2004 ◽  
Vol 96 (2) ◽  
pp. 966-969 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
Yu. Bilenko ◽  
P. V. Kosterin ◽  
B. M. Salzberg
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Light Sources ◽  
Low Frequency Noise ◽  
Term Stability ◽  
Long Term Stability ◽  
Noncoherent Light

Estimation of the long-term stability of piezoresistive LTCC pressure sensors by means of low-frequency noise measurements

2013 ◽  
Vol 199 ◽  
pp. 334-343 ◽  
Author(s):  
Marina Santo Zarnik ◽  
Vlasta Sedlakova ◽  
Darko Belavic ◽  
Josef Sikula ◽  
Jiri Majzner ◽  
...  
Keyword(s):  
Pressure Sensors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Term Stability ◽  
Long Term Stability ◽  
Noise Measurements

New Trim Configurations for Laser Trimmed Thick-Film Resistors – Experimental Verification

2005 ◽  
Vol 2 (1) ◽  
pp. 19-24 ◽  
Author(s):  
Slawomir Kaminski ◽  
Edward Mis ◽  
Maciej Szymendera ◽  
Andrzej Dziedzic
Keyword(s):  
Thick Film ◽  
Experimental Verification ◽  
Electrical Potential ◽  
Low Frequency ◽  
Frequency Noise ◽  
New Approach ◽  
Long Term Stability ◽  
Pathway Length ◽  
Contact Shape

Laser trimming is the most effective and popular trimming method of thick-film and LTCC resistors at present. It is also still a subject of continuing theoretical and experimental analysis and optimization. Very recently a new approach to this process was suggested. It consists in replacing two-contact bar resistors by three-contact distributed structures trimmed by narrow cuts just around additional contact of different shape [1,2]. This paper presents experimental verification of such an approach. The relative trim characteristic and sensitivity are analyzed as a function of additional contact shape and cut length. Next long-term stability, pulse durability and low frequency noise are compared for two- and three-contact resistors versus trim pathway length. These investigations are completed by simulation of electrical potential distribution in two- and three-contact resistors with various length of trimming kerf.

scholarly journals High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs

2016 ◽  
Vol 16 (3) ◽  
pp. 282-289 ◽  
Author(s):  
Jin Chen ◽  
Yevgeniy S. Puzyrev ◽  
En Xia Zhang ◽  
Daniel M. Fleetwood ◽  
Ronald D. Schrimpf ◽  
...  
Keyword(s):  
High Field ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Field Stress ◽  
Gan Hemts

scholarly journals Effect of Hydrogen on Long-term Reliability of InZnO TFTs Characterized by Low-Frequency Noise

2021 ◽  
pp. 1-1
Author(s):  
Yayi Chen ◽  
Yuan Liu ◽  
Li Wang ◽  
Bin Li ◽  
Xiaoming Xiong ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals Low-frequency noise characteristics of high-power white LED during long-term aging experiment

2018 ◽  
Vol 58 (2) ◽  
Author(s):  
Justinas Glemža ◽  
Jonas Matukas ◽  
Sandra Pralgauskaitė ◽  
Vilius Palenskis
Keyword(s):  
High Power ◽  
Cross Correlation ◽  
Light Output ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Phosphor Layer ◽  
Noise Characteristics ◽  
The Cross

Low-frequency electrical and optical noise characteristics of a high power white InGaN LED and the cross-correlation coefficient between these fluctuations are investigated during the long-term ageing experiment (28000 h). The analysis of cross-correlation shows that the correlated part of the low-frequency electrical noise, which indicates physical processes in the active area of the LED, varies during the ageing experiment. Two main stages are distinguished considering the rapid changes of the noise characteristics. The initial stage (after the first 1100 h) is followed by the decrease in the noise power at low forward currents and the increase in the light output. The final stage (after 28000 h) is characterized by a strong growth of the low-frequency noise, the decrease of the light output and the increase of the correlated part of electrical and optical fluctuations. These changes mean a failure in the active layer of the LED. The optical output decomposition into two spectral parts, the radiation generated by the LED chip and the radiation generated by the phosphor layer, enables evaluation of the phosphor layer influence on the degradation process of device optical characteristics. Despite the fact that this layer contributes to the variation of the LED chromatic properties, the cross-correlation analysis has shown that the phosphor layer does not act as a possible noise source during the ageing experiment.

scholarly journals Review of Low-Frequency Noise Properties of High-Power White LEDs during Long-Term Aging

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 13
Author(s):  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Justinas Glemža ◽  
Sandra Pralgauskaitė
Keyword(s):  
Output Power ◽  
Blue Light ◽  
White Light ◽  
High Power ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Phosphor Layer ◽  
Light Emitting

Low-frequency noise investigation is a highly sensitive and very informative method for characterization of white nitride-based light-emitting diodes (LEDs) as well as for the evaluation of their degradation. We present a review of quality and reliability investigations of high-power (1 W and 3 W) white light-emitting diodes during long-term aging at the maximum permissible forward current at room temperature. The research was centered on the investigation of blue InGaN and AlInGaN quantum wells (QWs) LEDs covered by a YAG:Ce3+ phosphor layer for white light emission. The current-voltage, light output power, and low-frequency noise characteristics were measured. A broadband silicon photodetector and two-color (blue and red) selective silicon photodetectors were used for the LED output power detection, which makes it possible to separate physical processes related to the initial blue light radiation and the phosphor luminescence. Particular attention was paid to the measurement and interpretation of the simultaneous cross-correlation coefficient between electrical and optical fluctuations. The presented method enables to determine which part of fluctuations originates in the quantum well layer of the LED. The technique using the two-color selective photodetector enables investigation of changes in the noise properties of the main blue light source and the phosphor layer during the long-term aging.

Sign in / Sign up

Export Citation Format

Share Document