Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs

1991 ◽  
Vol 38 (2) ◽  
pp. 303-309 ◽  
Author(s):  
N. Iwamuro ◽  
A. Okamoto ◽  
S. Tagami ◽  
H. Motoyama
Keyword(s):  
Numerical Analysis ◽  
Short Circuit ◽  
Safe Operating

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA

2012 ◽  
Vol 717-720 ◽  
pp. 1045-1048 ◽  
Author(s):  
Woong Je Sung ◽  
B.J. Baliga ◽  
Alex Q. Huang
Keyword(s):  
Power Distribution ◽  
Distribution Systems ◽  
Voltage Drop ◽  
Short Circuit ◽  
Fault Isolation ◽  
Power Distribution Systems ◽  
Trade Off ◽  
Forward Voltage Drop ◽  
Isolation Device ◽  
Safe Operating

This paper aims to introduce a solid-state fault isolation device (FID) for the short circuit protection application in the power distribution systems. The key performance of a FID is to have a low on-state loss and a strong short circuit safe operating area (SCSOA). As a FID, a novel 15kV 4H-SiC field controlled diode (FCD) with a p+buried layer is proposed to provide an improved trade-off between the on-state forward voltage drop and the saturation current. Dynamic response to the fault and the application example of the proposed FCD are described in this paper.

scholarly journals Numerical analysis on the short-circuit withstanding performance of busbar system in LV switchgear

2020 ◽  
Vol 14 (7) ◽  
pp. 739-744
Author(s):  
Yongcong Wu ◽  
Jiangjun Ruan ◽  
Peng Li ◽  
Yujia Gong ◽  
Mingyang Long
Keyword(s):  
Numerical Analysis ◽  
Short Circuit

Short-circuit safe operating area of superjunction MOSFETs

2016 ◽  
Author(s):  
Martin Pfost ◽  
Christian Unger ◽  
Gabriel Cretu ◽  
Marius Cenusa ◽  
Kevni Buyuktas ◽  
...  
Keyword(s):  
Short Circuit ◽  
Safe Operating

scholarly journals Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

2018 ◽  
Vol 33 (2) ◽  
pp. 1075-1086 ◽  
Author(s):  
Yuxiang Chen ◽  
Wuhua Li ◽  
Francesco Iannuzzo ◽  
Haoze Luo ◽  
Xiangning He ◽  
...  
Keyword(s):  
High Power ◽  
Failure Modes ◽  
Short Circuit ◽  
Three Dimensional ◽  
Igbt Modules ◽  
Safe Operating

Effect of short circuit aging on safe operating area of SiC MOSFET

2018 ◽  
Vol 88-90 ◽  
pp. 645-651 ◽  
Author(s):  
Tien Anh Nguyen ◽  
Stéphane Lefebvre ◽  
Stéphane Azzopardi
Keyword(s):  
Short Circuit ◽  
Circuit Aging ◽  
Safe Operating
Sign in / Sign up

Export Citation Format

Share Document