Suppression of parasitic bipolar action in ultra-thin-film fully-depleted CMOS/SIMOX devices by Ar-ion implantation into source/drain regions

T. Ohno; M. Takahashi; Y. Kado; T. Tsuchiya

doi:10.1109/16.669534

Suppression of parasitic bipolar action in ultra-thin-film fully-depleted CMOS/SIMOX devices by Ar-ion implantation into source/drain regions

IEEE Transactions on Electron Devices ◽

10.1109/16.669534 ◽

1998 ◽

Vol 45 (5) ◽

pp. 1071-1076 ◽

Cited By ~ 21

Author(s):

T. Ohno ◽

M. Takahashi ◽

Y. Kado ◽

T. Tsuchiya

Keyword(s):

Thin Film ◽

Ion Implantation ◽

Fully Depleted ◽

Ultra Thin Film

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Position-Controlled Si Nanocrystals in a SiO2Thin Film Using a Novel Amorphous Si Ultra-Thin-Film “Nanomask” due to a Bio-Nanoprocess for Low-Energy Ion Implantation

Applied Physics Express ◽

10.1143/apex.1.034001 ◽

2008 ◽

Vol 1 ◽

pp. 034001 ◽

Cited By ~ 6

Author(s):

Yuji Nakama ◽

Shinji Nagamachi ◽

Jun Ohta ◽

Masahiro Nunoshita

Keyword(s):

Thin Film ◽

Ion Implantation ◽

Low Energy ◽

Si Nanocrystals ◽

Amorphous Si ◽

Ultra Thin Film

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Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6290 ◽

1998 ◽

Vol 37 (Part 1, No. 12A) ◽

pp. 6290-6294

Author(s):

Yasuhiro Sato ◽

Toshihiko Kosugi ◽

Toshiaki Tsuchiya ◽

Hiromu Ishii

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Drain Region ◽

Ultra Thin Film

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Hot-carrier-induced degradation in ultra-thin-film fully-depleted SOI MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(96)00095-0 ◽

1996 ◽

Vol 39 (12) ◽

pp. 1791-1794 ◽

Cited By ~ 9

Author(s):

Bin Yu ◽

Zhi-Jian Ma ◽

George Zhang ◽

Chenming Hu

Keyword(s):

Thin Film ◽

Fully Depleted ◽

Hot Carrier ◽

Ultra Thin Film

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300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-µm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5875 ◽

1998 ◽

Vol 37 (Part 1, No. 11) ◽

pp. 5875-5879 ◽

Cited By ~ 1

Author(s):

Yasuhiro Sato ◽

Yuichi Kado ◽

Toshiaki Tsuchiya ◽

Toshihiko Kosugi ◽

Hiromu Ishii

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Gate Arrays ◽

Ultra Thin Film

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Ultra-thin film fully-depleted SOI CMOS with raised G/S/D device architecture for sub-100 nm applications

2001 IEEE International SOI Conference Proceedings (Cat No 01CH37207) SOI-01 ◽

10.1109/soic.2001.957977 ◽

2002 ◽

Cited By ~ 3

Author(s):

H. van Meer ◽

K. De Meyer

Keyword(s):

Thin Film ◽

Fully Depleted ◽

Device Architecture ◽

Ultra Thin Film ◽

Soi Cmos

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Hot-carrier effect in ultra-thin-film (UTF) fully-depleted SOI MOSFETs

1996 54th Annual Device Research Conference Digest ◽

10.1109/drc.1996.546300 ◽

2002 ◽

Cited By ~ 2

Author(s):

Bin Yu ◽

Zhi-Jian Ma ◽

G. Zhang ◽

Chenming Hu

Keyword(s):

Thin Film ◽

Fully Depleted ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect ◽

Ultra Thin Film

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300 KG gate-array LSI using 0.25-μm ultra-thin-film fully-depleted CMOS/SIMOX with tungsten-deposited source/drain

1997 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1997.634986 ◽

2002 ◽

Author(s):

Y. Sato ◽

Y. Kado ◽

T. Tsuchiya ◽

T. Kosugi ◽

H. Ishii ◽

...

Keyword(s):

Thin Film ◽

Fully Depleted ◽

Gate Array ◽

Ultra Thin Film

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Suppression of the parasitic bipolar effect in ultra-thin-film nMOSFETs/SIMOX by Ar ion implantation into source/drain regions

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.499298 ◽

2002 ◽

Cited By ~ 23

Author(s):

T. Ohno ◽

M. Takahashi ◽

A. Ohtaka ◽

Y. Sakakibara ◽

T. Tsuchiya

Keyword(s):

Thin Film ◽

Ion Implantation ◽

Ultra Thin Film

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Reduction of Wind Disturbance by Optimizing the Drive Current of Pt Ultra-thin Film Hydrogen Sensor

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.140.92 ◽

2020 ◽

Vol 140 (4) ◽

pp. 92-96

Author(s):

Yuto Goda ◽

Hiroto Shobu ◽

Kenji Sakai ◽

Toshihiko Kiwa ◽

Kenji Kondo ◽

...

Keyword(s):

Thin Film ◽

Hydrogen Sensor ◽

Wind Disturbance ◽

Drive Current ◽

Ultra Thin Film

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Measurement of ultra-thin film fracture by nano-indentation: a numerical study

10.31274/etd-180810-136 ◽

2011 ◽

Author(s):

Benjamin A. Burke

Keyword(s):

Thin Film ◽

Numerical Study ◽

Nano Indentation ◽

Ultra Thin Film

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