Controlling plasma charge damage in advanced semiconductor manufacturing. Challenge of small feature size device, large chip size, and large wafer size

1998 ◽  
Vol 45 (3) ◽  
pp. 722-730 ◽  
Author(s):  
P.K. Aum ◽  
R. Brandshaft ◽  
D. Brandshaft ◽  
T.B. Dao
Keyword(s):  
Semiconductor Manufacturing ◽  
Feature Size ◽  
Chip Size ◽  
Small Feature ◽  
Wafer Size

SEE characteristics of small feature size devices by using laser backside testing

2012 ◽  
Vol 33 (1) ◽  
pp. 014008 ◽  
Author(s):  
Guoqiang Feng ◽  
Shipeng Shangguan ◽  
Yingqi Ma ◽  
Jianwei Han
Keyword(s):  
Feature Size ◽  
Small Feature

scholarly journals Plasma etch technologies for the development of ultra-small feature size transistor devices

2011 ◽  
Vol 44 (17) ◽  
pp. 174012 ◽  
Author(s):  
D Borah ◽  
M T Shaw ◽  
S Rasappa ◽  
R A Farrell ◽  
C O'Mahony ◽  
...  
Keyword(s):  
Plasma Etch ◽  
Feature Size ◽  
Small Feature

Polymer nanostructures in sub-micron lithographically defined channels: film-thickness effects on structural alignment of a small feature size polystyrene–polyisoprene–polystyrene block copolymer

Soft Matter ◽  
2007 ◽  
Vol 3 (7) ◽  
pp. 916-921 ◽  
Author(s):  
Thomas G. Fitzgerald ◽  
Francesca Borsetto ◽  
John M. O'Callaghan ◽  
Barbara Kosmala ◽  
Justin D. Holmes ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Film Thickness ◽  
Structural Alignment ◽  
Feature Size ◽  
Polymer Nanostructures ◽  
Small Feature

scholarly journals Ultra-Low Temperature Chillers for Semiconductor Manufacturing Process

2021 ◽  
Author(s):  
Jung-In Yoon ◽  
Chang-Hyo Son ◽  
Sung-Hoon Seol ◽  
Ji-Hoon Yoon
Keyword(s):  
Low Temperature ◽  
Manufacturing Process ◽  
Semiconductor Manufacturing ◽  
Semiconductor Devices ◽  
Manufacturing Technology ◽  
Cooling Cycle ◽  
Cooling Medium ◽  
Wafer Size ◽  
Semiconductor Process

The growth of the semiconductor market and advancement of manufacturing technology have led to an increase in wafer size and highly integrated semiconductor devices. The temperature of the supplied cooling medium from the chiller that removes the heat produced in the semiconductor manufacturing process is required to be at a lower level because of the high integration. The Joule-Thomson cooling cycle, which uses a mixed refrigerant (MR) to produce the cooling medium at a level of −100°C required for the semiconductor process, has recently gained attention. When a MR is used, the chiller’s performance is heavily influenced by the composition and proportions of the refrigerant charged to the chiller system. Therefore, this paper introduces a cooling cycle that uses an MR to achieve the required low temperature of −100°C in the semiconductor manufacturing process and provides the results of simple experiments to determine the effects of different MR compositions.

scholarly journals Novel Memory Structures in QCA Nano Technology

2020 ◽  
Vol sceeer (3d) ◽  
pp. 119-124
Author(s):  
Ali Majeed ◽  
Esam Alkaldy ◽  
Mohd Zainal ◽  
Danial Nor
Keyword(s):  
High Speed ◽  
Good Alternative ◽  
Feature Size ◽  
Nano Technology ◽  
Flip Flop ◽  
Quantum Dot Cellular Automata ◽  
Cell Counts ◽  
Lower Complexity ◽  
Small Feature ◽  
Novel Structures

Quantum-dot Cellular Automata (QCA) is a new emerging technology for designing electronic circuits in nanoscale. QCA technology comes to overcome the CMOS limitation and to be a good alternative as it can work in ultra-high-speed. QCA brought researchers attention due to many features such as low power consumption, small feature size in addition to high frequency. Designing circuits in QCA technology with minimum costs such as cells count and the area is very important. This paper presents novel structures of D-latch and D-Flip Flop with the lower area and cell count. The proposed Flip-Flop has SET and RESET ability. The proposed latch and Flip-Flop have lower complexity compared with counterparts in terms of cell counts by 32% and 26% respectively. The proposed circuits are designed and simulated in QCADesigner software.

Characterizing STI CMP Processes with an STI Test Mask Having Realistic Geometric Shapes

2004 ◽  
Vol 816 ◽  
Author(s):  
Xiaolin Xie ◽  
Tae Park ◽  
Duane Boning ◽  
Aaron Smith ◽  
Paul Allard ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Device Performance ◽  
Secondary Effects ◽  
Feature Size ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Oxide Deposition ◽  
Pattern Dependencies ◽  
Small Feature ◽  
Ongoing Development

AbstractChemical mechanical polishing (CMP) has become the enabling planarization method for shallow trench isolation (STI) of sub 0.25μm technology. CMP is able to reduce topography over longer lateral distances than earlier techniques; however, CMP still suffers from pattern dependencies that result in large variation in the post-polish profile across a chip. In the STI process, insufficient polish will leave residue nitride and cause device failure, while excess dishing and erosion degrade device performance.Our group has proposed several chip-scale CMP pattern density models [1], and a methodology using designed dielectric CMP test mask to characterize CMP processes [2]. The methodology has proven helpful in understanding STI CMP; however, it has several limitations as the existing test mask primarily consists of arrays of lines and spaces of large feature size varying from 10 to 100 μm. In this paper, we present a new STI characterization mask, which consists of various rectangular, L-shape, and X-shape structures of feature sizes down to submicron. The mask is designed to study advanced STI CMP processes better, as it is more representative of real STI structures. The small feature size amplifies the effects of edge acceleration and oxide deposition bias, and thus enables us to study their impact better. Experimental data from an STI CMP process is shown to verify the methodology, and these secondary effects are explored. The new mask and data guide ongoing development of improved pattern dependent STI CMP models.

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