Multiple negative-differential-resistance (MNDR) phenomena of a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositioned In/sub x/Ga/sub 1-x/As quantum wells

1998 ◽  
Vol 45 (2) ◽  
pp. 373-379 ◽  
Author(s):  
Wen-Chau Liu ◽  
Lih-Wen Laih ◽  
Shiou-Ying Cheng ◽  
Wen-Lung Chang ◽  
Wei-Chou Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor

1988 ◽  
Vol 35 (12) ◽  
pp. 2453-2454 ◽  
Author(s):  
N. Tabatabaie ◽  
T. Sands ◽  
J.P. Harbison ◽  
H.L. Gilchrist ◽  
V.G. Keramidas
Keyword(s):  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Differential Resistance ◽  
Metal Base

Organic quantum wells with multiple negative differential resistance peaks and its photoswitch effect

2016 ◽  
Vol 35 ◽  
pp. 24-32 ◽  
Author(s):  
Yangjie Zhu ◽  
Haibo Wang ◽  
Weiping Chen ◽  
Yue Wang ◽  
Donghang Yan
Keyword(s):  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Differential Resistance

THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS

2006 ◽  
Vol 17 (04) ◽  
pp. 561-570
Author(s):  
BIN YANG ◽  
JIE ZHANG ◽  
YONG-FANG ZHAO ◽  
XIAO-GONG JING
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Theoretical Research ◽  
High Quality ◽  
Double Barrier ◽  
Multi Quantum Well ◽  
Double Barrier Structure ◽  
Good Agreement

The I-V curves in multi-quantum wells of different semiconductors are studied theoretically using the formalism of the transmission coefficient directly derived from Schrödinger equation. Al0.5Ga0.5As/GaAs double-barrier quantum well, Al0.29Ga0.71As/GaAs multi-quantum well, and AlSb/InAs double-barrier structure are calculated. The influences of well width, barrier width, temperature, Fermi energy on I-V characteristic curves are discussed in detail. Calculated results show that obvious negative differential resistance effects presented by our simulated I-V curves has a good agreement with previous experiments. Therefore, it can be a theoretical expectation to design experimentally high-quality semiconductor devices.

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