Insight into low frequency noise induced by gate leakage current in AlGaAs/GaAs high electron mobility transistors at 4.2 K

2011 ◽  
Vol 99 (11) ◽  
pp. 113505 ◽  
Author(s):  
Y. X. Liang ◽  
Q. Dong ◽  
M. C. Cheng ◽  
U. Gennser ◽  
A. Cavanna ◽  
...  
2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  

2002 ◽  
Vol 80 (12) ◽  
pp. 2126-2128 ◽  
Author(s):  
S. A. Vitusevich ◽  
S. V. Danylyuk ◽  
N. Klein ◽  
M. V. Petrychuk ◽  
V. N. Sokolov ◽  
...  

2003 ◽  
Vol 0 (1) ◽  
pp. 78-81 ◽  
Author(s):  
S.A. Vitusevich ◽  
N. Klein ◽  
M.V. Petrychuk ◽  
A.E. Belyaev ◽  
S.V. Danylyuk ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document