Insight into low frequency noise induced by gate leakage current in AlGaAs/GaAs high electron mobility transistors at 4.2 K
2014 ◽
2016 ◽
Vol 55
(5)
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pp. 056502
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1997 ◽
Vol 44
(11)
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pp. 1883-1887
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2013 ◽
Vol 13
(3)
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pp. 1738-1740
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