Extraction of gate dependent source/drain resistance and effective channel length in MOS devices at 77 K

C.Y. Hwang;  Tsung-Chia Kuo; J.C.S. Woo

doi:10.1109/16.464408

Extraction of gate dependent source/drain resistance and effective channel length in MOS devices at 77 K

IEEE Transactions on Electron Devices ◽

10.1109/16.464408 ◽

1995 ◽

Vol 42 (10) ◽

pp. 1863-1865 ◽

Cited By ~ 12

Author(s):

C.Y. Hwang ◽

Tsung-Chia Kuo ◽

J.C.S. Woo

Keyword(s):

Channel Length ◽

Mos Devices ◽

Effective Channel

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Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices

Solid-State Electronics ◽

10.1016/j.sse.2006.09.005 ◽

2006 ◽

Vol 50 (11-12) ◽

pp. 1774-1779 ◽

Cited By ~ 8

Author(s):

C.S. Ho ◽

Y.C. Lo ◽

Y.H. Chang ◽

Juin J. Liou

Keyword(s):

Series Resistance ◽

Channel Length ◽

Gate Bias ◽

Mos Devices ◽

Effective Channel

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Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760686 ◽

2008 ◽

Cited By ~ 1

Author(s):

W.S. Lau ◽

Peizhen Yang ◽

V. Ho ◽

B.K. Lim ◽

S.Y. Siah ◽

...

Keyword(s):

Cmos Technology ◽

Channel Length ◽

Effective Channel

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Extraction of metallurgical effective channel length in LDD MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/16.398660 ◽

1995 ◽

Vol 42 (8) ◽

pp. 1461-1466 ◽

Cited By ~ 9

Author(s):

Soonwon Hong ◽

Kwyro Lee

Keyword(s):

Channel Length ◽

Effective Channel

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A possible mechanism for reconciling large gate-drain overlap capacitance with a small difference between polysilicon gate length and effective channel length in an advanced technology PFET

IEEE Electron Device Letters ◽

10.1109/55.701427 ◽

1998 ◽

Vol 19 (7) ◽

pp. 234-236 ◽

Cited By ~ 7

Author(s):

R. Young ◽

L. Su ◽

M. Ieong ◽

S. Kapur

Keyword(s):

Small Difference ◽

Channel Length ◽

Advanced Technology ◽

Gate Length ◽

Polysilicon Gate ◽

Effective Channel

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Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566323 ◽

2002 ◽

Author(s):

Z. Latif ◽

A. Ortiz-Conde ◽

J.J. Liou ◽

F.J.G. Sanchez ◽

W. Wong

Keyword(s):

Doping Level ◽

Extraction Methods ◽

Channel Length ◽

Short Channel ◽

Effective Channel

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A new method to determine effective channel length, series resistance and threshold voltage

Proceedings of International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1996.535635 ◽

2002 ◽

Cited By ~ 5

Author(s):

M. Sasaki ◽

H. Ito ◽

T. Horiuchi

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Channel Length ◽

New Method ◽

Effective Channel

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Subthreshold reference circuit with curvature compensation based on the channel length modulation of MOS devices

International Journal of Circuit Theory and Applications ◽

10.1002/cta.3201 ◽

2021 ◽

Author(s):

Hamed Aminzadeh

Keyword(s):

Channel Length ◽

Mos Devices ◽

Reference Circuit

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Principle of operation and performance of 1.3 volt SOI resistor load vertical dual carrier field effect transistor flip flop fabricated for SRAM, FPGA and switching SOC with effective channel length of 30nm

2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03 ◽

10.1109/icasic.2003.1277473 ◽

2003 ◽

Cited By ~ 3

Author(s):

Tang ◽

Li ◽

Yang ◽

Han ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Flip Flop ◽

Effect Transistor ◽

And Performance ◽

Effective Channel ◽

Sram Fpga

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Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors

Thin Solid Films ◽

10.1016/j.tsf.2009.02.067 ◽

2009 ◽

Vol 517 (23) ◽

pp. 6353-6357 ◽

Cited By ~ 6

Author(s):

A. Valletta ◽

M. Rapisarda ◽

L. Mariucci ◽

A. Pecora ◽

G. Fortunato ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Channel Length ◽

Silicon Thin Film ◽

Parasitic Resistance ◽

Effective Channel

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A new extraction method for effective channel length on lightly doped drain MOSFET's

10.1109/icmts.1990.67890 ◽

1990 ◽

Cited By ~ 12

Author(s):

J. Ida ◽

A. Kita ◽

F. Ichikawa

Keyword(s):

Extraction Method ◽

Channel Length ◽

Lightly Doped Drain ◽

Effective Channel

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