scholarly journals An analytical model for alloyed ohmic contacts using a trilayer transmission line model

1995 ◽  
Vol 42 (8) ◽  
pp. 1536-1547 ◽  
Author(s):  
G.K. Reeves ◽  
B. Harrison
Keyword(s):  
Transmission Line ◽  
Analytical Model ◽  
Ohmic Contacts ◽  
Transmission Line Model ◽  
Line Model

An Electrical Model for Multilayered n+/n and Heterostructure Planar Ohmic Contacts

1995 ◽  
Vol 382 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick W. Leech ◽  
H. Barry Harrison
Keyword(s):  
Transmission Line ◽  
Ohmic Contacts ◽  
Electrical Network ◽  
Transmission Line Model ◽  
Line Model ◽  
Planar Structures ◽  
Parasitic Resistance ◽  
Device Structures ◽  
Complex Models ◽  
Device Properties

ABSTRACTThe standard Transmission Line Model (TLM) is an electrical network that is commonly used to model planar two-layer (metal-semiconductor) ohmic contacts. More complex multilayered planar structures have led to the development of more complex models. A Tri-Layer Transmission Line Model (TLTLM) was recently proposed in order to more accurately represent an alloyed ohmic contact. The TLTLM also enables other layered planar contact structures such as non-alloyed n+/n, heterojunction and metal-silicide-silicon contacts to be analysed. In this paper, it is shown that when the TLTLM is combined with a modified TLM network, important device properties such as contact and parasitic resistance can be derived for device structures using several epilayers such as FET's. An example is given of the current distribution in an FET and the calculation of the parasitic resistance in the gate-drain channel and the contact resistance of the drain.

A New Electrical Model for Calculating the Sheet Resistance Parameter in Alloyed Ohmic Contacts

1994 ◽  
Vol 337 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
H. Barry Harrison
Keyword(s):  
Transmission Line ◽  
Sheet Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Metal Layer ◽  
Semiconductor Layer ◽  
Specific Contact Resistance ◽  
Transmission Line Model ◽  
Line Model ◽  
Specific Contact

ABSTRACTThis paper briefly reviews the standard Transmission Line Model (TLM) commonly used to measure the specific contact resistance ρc and the sheet resistance Rsk beneath a planar ohmic contact. In the case of an alloyed ohmic contact, a more realistic three layer (Tri-Layer Transmission Line Model (TLTLM)) can be used for the analysis. This model is based on three layers (metal layer, alloyed semiconductor layer and the unalloyed semiconductor layer) and the two interfaces between them. By using appropriate TLTLM parameters, it is possible to calculate the sheet resistance Rsk that has been experimentally derived from the standard TLM. The new TLTLM model predicts that values of Rsk greater and less than Rsh (the unmodified epitaxial layer sheet resistance) are possible in agreement with experimentally reported observations.

Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

2004 ◽  
Vol 84 (14) ◽  
pp. 2584-2586 ◽  
Author(s):  
N. C. Chen ◽  
P. H. Chang ◽  
A. P. Chiu ◽  
M. C. Wang ◽  
W. S. Feng ◽  
...  
Keyword(s):  
Transmission Line ◽  
Ohmic Contacts ◽  
Transmission Line Model ◽  
Line Model

Electrical Modelling and Characterisation of Alloyed Ohmic Contacts

1993 ◽  
Vol 318 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick W. Leech ◽  
H. Barry Harrison
Keyword(s):  
Contact Resistance ◽  
Transmission Line ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Realistic Model ◽  
Specific Contact Resistance ◽  
Transmission Line Model ◽  
Semiconductor Interface ◽  
Line Model ◽  
Specific Contact

ABSTRACTThis paper briefly reviews the standard Transmission Line Model (TLM) commonly used to measure the specific contact resistance of a planar ohmic contact. It is proposed that in the case of a typical Au-Ge-Ni alloyed ohmic contact, a more realistic model would need to take into account the presence of the alloyed layer at the metal-semiconductor interface. An alternative is described which is based on three contact layers and the two interfaces between them, thus forming a Tri-Layer Transmission Line Model (TLTLM). Expressions are given for the contact resistance Rc and the contact end resistance Re of this structure, together with a current division factor, f. Values for the parameters of this model are inferred from experimentally reported values of Rc and Re for two types of contact.

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