Low-frequency noise spectroscopy

1994 ◽  
Vol 41 (11) ◽  
pp. 2188-2197 ◽  
Author(s):  
B.K. Jones
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

Study of 14.9 MeV Neutron Irradiation Effects on Ni/GaN Schottky Contacts Using Low‐Frequency Noise Spectroscopy

2019 ◽  
Vol 217 (7) ◽  
pp. 1900701
Author(s):  
Yuan Ren ◽  
Leidang Zhou ◽  
Kang Zhang ◽  
Liang Chen ◽  
Xiaoping Ouyang ◽  
...  
Keyword(s):  
Neutron Irradiation ◽  
Low Frequency ◽  
Schottky Contacts ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Irradiation Effects ◽  
Noise Spectroscopy

Low Frequency Noise Spectroscopy for Schottky Contacts

2000 ◽  
Vol 37 (6) ◽  
pp. 966 ◽  
Author(s):  
Lee J. I. ◽  
Han I .K. ◽  
Heo D. C. ◽  
Brini J. ◽  
Chovet A. ◽  
...  
Keyword(s):  
Low Frequency ◽  
Schottky Contacts ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

Low-Frequency Noise Spectroscopy Characterization of HgCdTe Infrared Detectors

2020 ◽  
Vol 67 (2) ◽  
pp. 547-551 ◽  
Author(s):  
Liqi Zhu ◽  
Jian Huang ◽  
Zongheng Xie ◽  
Zhuo Deng ◽  
Lu Chen ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors

1999 ◽  
Vol 46 (5) ◽  
pp. 968-974 ◽  
Author(s):  
C.T. Angelis ◽  
C.A. Dimitriadis ◽  
J. Brini ◽  
G. Kamarinos ◽  
V.K. Gueorguiev ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Spectroscopy

Impact of Proton Irradiation on Power 4H-SiC MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 1074-1080
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Leonid Fursin ◽  
Anatoly M. Strel'chuk ◽  
Mikhail E. Levinshtein ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Removal Rate ◽  
Low Frequency ◽  
Frequency Noise ◽  
Electrical Characteristics ◽  
Low Frequency Noise ◽  
Frequency Range ◽  
Maximum Value ◽  
Noise Spectroscopy ◽  
Noise Density

Impact of 15 MeV proton irradiation on electrical characteristics and low frequency noise has been studied in high-power vertical 4H-SiC MOSFETs of 1.2 kV-class at doses 1012 £ F £ 1014 cm-2. The maximum value of the field-effect mobility µFЕ depends weakly on F up to F = 2×1013 cm-2. At F = 4×1013 cm-2, the character of the µFЕ(Vg) dependence changes radically. The maximum µFЕ decreases approximately threefold. The dose Fcr corresponding to the complete degradation of the device is about 1014 cm-2. It can be estimated as Fcr» he/n0, where he is the electron removal rate and n0 is the initial electron concentration in the drift layer. In the entire frequency range of analysis f, gate voltages, and drain-source biases, the frequency dependence of the current spectral noise density SI(f) follows the law SI ~ 1/f. From the data of noise spectroscopy, the density of traps in the gate oxide Ntv has been estimated. In non-irradiated structures, Ntv » 5.4×1018 cm-3eV-1. At Ф = 6×1013 cm-2, the Ntv value increases to Ntv » 7.2×1019cm-3eV-1. The non-monotonic behavior of the output current Id and the level of low frequency noise on dose F has been demonstrated.

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