Inverted-gate field-effect transistors: novel high-frequency structures

1988 ◽  
Vol 35 (7) ◽  
pp. 810-817 ◽  
Author(s):  
Samir El-Ghazaly ◽  
Tatsuo Itoh
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors

High-frequency equivalent circuits of junction-gate field-effect transistors

1970 ◽  
Vol 6 (18) ◽  
pp. 590
Author(s):  
P.U. Calzolari ◽  
S. Graffi ◽  
A. Mazzone
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Equivalent Circuits

scholarly journals Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3121
Author(s):  
Monica La Mura ◽  
Patrizia Lamberti ◽  
Vincenzo Tucci
Keyword(s):  
High Frequency ◽  
Communication Systems ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Geometrical Parameters ◽  
Effect Transistor ◽  
Rf Performance ◽  
The Impact

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

scholarly journals Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Velocity Saturation ◽  
Self Heating ◽  
Heating Effects ◽  
Carrier Velocity ◽  
High Frequency Performance

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

scholarly journals Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

2013 ◽  
Vol 60 (6) ◽  
pp. 1799-1806 ◽  
Author(s):  
Gennady I. Zebrev ◽  
Alexander A. Tselykovskiy ◽  
Daria K. Batmanova ◽  
Evgeny V. Melnik
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Current Parameter
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