Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETs

1989 ◽  
Vol 36 (5) ◽  
pp. 930-937 ◽  
Author(s):  
J.M. Higman ◽  
K. Hess ◽  
C.G. Hwang ◽  
R.W. Dutton
Keyword(s):  
Monte Carlo ◽  
Hot Electron ◽  
Drift Diffusion ◽  
Diffusion Analysis ◽  
Electron Effects

scholarly journals New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 307-311
Author(s):  
J. Jakumeit ◽  
U. Ravaioli ◽  
K. Hess
Keyword(s):  
Monte Carlo ◽  
Evolutionary Algorithm ◽  
Mutation Operator ◽  
Hot Electron ◽  
New Approach ◽  
Substrate Current ◽  
Electron Distributions ◽  
First Results ◽  
Calculation Ability ◽  
Electron Effects

We introduce a new approach to hot electron effects in Si-MOSFETs, based on a mixture of evolutionary optimization algorithms and Monte Carlo technique. The Evolutionary Algorithm searchs for electron distributions which fit a given goal, for example a measured substrate current and in this way can calculate backwards electron distributions from measurement results. The search of the Evolutionary Algorithm is directed toward physically correct distributions by help of a Monte Carlo like mutation operator. Results for bulk-Si demonstrate the correctness of the physical model in the Monte Carlo like mutation operator and the backward calculation ability of the Evolutionary Algorithm. First results for Si-MOSFETs are qualitatively comparable to results of a Full Band Monte Carlo simulation.

Modeling hot-electron gate current in Si MOSFET's using a coupled drift-diffusion and Monte Carlo method

1992 ◽  
Vol 39 (11) ◽  
pp. 2562-2568 ◽  
Author(s):  
Chimoon Huang ◽  
Tahui Wang ◽  
C.N. Chen ◽  
M.C. Chang ◽  
J. Fu
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Hot Electron ◽  
Drift Diffusion ◽  
Gate Current

Monte Carlo harmonic-balance and drift-diffusion harmonic-balance analyses of 100-600 GHz Schottky barrier varactor frequency multipliers

1997 ◽  
Vol 44 (11) ◽  
pp. 1843-1850 ◽  
Author(s):  
R.E. Lipsey ◽  
S.H. Jones ◽  
J.R. Jones ◽  
T.W. Crowe ◽  
L.F. Horvath ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Schottky Barrier ◽  
Harmonic Balance ◽  
Frequency Multipliers ◽  
Drift Diffusion

scholarly journals Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length

2000 ◽  
Vol 85 (8) ◽  
pp. 1718-1721 ◽  
Author(s):  
M. E. Gershenson ◽  
Yu. B. Khavin ◽  
D. Reuter ◽  
P. Schafmeister ◽  
A. D. Wieck
Keyword(s):  
Localization Length ◽  
Two Dimensional ◽  
Hot Electron ◽  
Electron Effects

Hot electron effects in narrow width MOS devices

1987 ◽  
Vol 18 (6) ◽  
pp. 25-30 ◽  
Author(s):  
R.S. Petrova ◽  
R.S. Kamburova ◽  
P.K. Vitanov ◽  
E.N. Stefanov
Keyword(s):  
Hot Electron ◽  
Mos Devices ◽  
Narrow Width ◽  
Electron Effects
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